參數(shù)資料
型號: AD812ARZ
廠商: Analog Devices Inc
文件頁數(shù): 12/16頁
文件大?。?/td> 0K
描述: IC OPAMP DUAL CURR-FDBK 8-SOIC
標準包裝: 98
應用: 電流反饋
電路數(shù): 2
-3db帶寬: 145MHz
轉換速率: 1600 V/µs
電流 - 電源: 4.5mA
電流 - 輸出 / 通道: 50mA
電壓 - 電源,單路/雙路(±): 2.4 V ~ 36 V,±1.2 V ~ 18 V
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應商設備封裝: 8-SOIC
包裝: 管件
產(chǎn)品目錄頁面: 769 (CN2011-ZH PDF)
AD812
–5–
REV. B
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD812 is limited by the associated rise in junction temperature.
The maximum safe junction temperature for the plastic encap-
sulated parts is determined by the glass transition temperature
of the plastic, about 150
°C. Exceeding this limit temporarily
may cause a shift in parametric performance due to a change in
the stresses exerted on the die by the package. Exceeding a
junction temperature of 175
°C for an extended period can result
in device failure.
While the AD812 is internally short circuit protected, this may
not be sufficient to guarantee that the maximum junction tem-
perature (150 degrees) is not exceeded under all conditions. To
ensure proper operation, it is important to observe the derating
curves.
It must also be noted that in high (noninverting) gain configura-
tions (with low values of gain resistor), a high level of input
overdrive can result in a large input error current, which may
result in a significant power dissipation in the input stage. This
power must be included when computing the junction tempera-
ture rise due to total internal power.
MAXIMUM
POWER
DISSIPATION
Watts
AMBIENT TEMPERATURE – C
2.0
1.5
0
–50
90
–40 –30 –20 –10
0
10
20 30
50
60
70
80
40
1.0
0.5
8-LEAD SOIC PACKAGE
8-LEAD MINI-DIP PACKAGE
TJ = +150 C
Figure 3. Plot of Maximum Power Dissipation vs.
Temperature
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±18 V
Internal Power Dissipation
2
Plastic (N) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3 Watts
Small Outline (R) . . . . . . . . . . . . . . . . . . . . . . . . . . 0.9 Watts
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . .
±V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . .
±1.2 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range N, R . . . . . . . . . –65
°C to +125°C
Operating Temperature Range . . . . . . . . . . . . –40
°C to +85°C
Lead Temperature Range (Soldering, 10 sec) . . . . . . . +300
°C
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2Specification is for device in free air: 8-lead plastic package:
θ
JA = 90°C/Watt;
8-lead SOIC package:
θ
JA = 150°C/Watt.
ORDERING GUIDE
Temperature
Package
Model
Range
Description
Option
AD812AN
–40
°C to +85°C
8-Lead Plastic DIP
N-8
AD812AR
–40
°C to +85°C
8-Lead Plastic SOIC SO-8
AD812AR-REEL
13" Reel
AD812AR-REEL7
7" Reel
METALIZATION PHOTO
Dimensions shown in inches and (mm).
V+
8
OUT2
7
–IN2
6
2
–IN1
3
+IN1
4
V–
1
OUT1
5 +IN2
4 V–
0.0783
(1.99)
0.0539
(1.37)
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD812 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
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