參數(shù)資料
型號: AD813AR-14-REEL7
廠商: Analog Devices Inc
文件頁數(shù): 16/19頁
文件大?。?/td> 0K
描述: IC AMP TRIPLE VIDEO LP 14-SOIC
標(biāo)準(zhǔn)包裝: 750
應(yīng)用: 電流反饋
電路數(shù): 3
-3db帶寬: 100MHz
轉(zhuǎn)換速率: 250 V/µs
電流 - 電源: 4.5mA
電流 - 輸出 / 通道: 50mA
電壓 - 電源,單路/雙路(±): 2.4 V ~ 36 V,±1.2 V ~ 18 V
安裝類型: 表面貼裝
封裝/外殼: 14-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 14-SOICN
包裝: 帶卷 (TR)
AD813
REV. B
–6–
METALIZATION PHOTO
Dimensions shown in inches and (mm).
2.5
0.5
–50
80
2.0
1.0
–40
1.5
010
–10
–20
–30
20
30
40
50
60
70
90
AMBIENT TEMPERATURE – C
MAXIMUM
POWER
DISSIPATION
Watts
14-LEAD SOIC
TJ = +150 C
14-LEAD DIP PACKAGE
Figure 3. Maximum Power Dissipation vs. Ambient
Temperature
Maximum Power Dissipation
The maximum power that can be safely dissipated by the
AD813 is limited by the associated rise in junction temperature.
The maximum safe junction temperature for the plastic encap-
sulated parts is determined by the glass transition temperature
of the plastic, about 150
°C. Exceeding this limit temporarily
may cause a shift in parametric performance due to a change in
the stresses exerted on the die by the package. Exceeding a
junction temperature of 175
°C for an extended period can result
in device failure.
While the AD813 is internally short circuit protected, this may
not be enough to guarantee that the maximum junction tem-
perature (150
°C) is not exceeded under all conditions. To
ensure proper operation, it is important to observe the derating
curves.
It must also be noted that in (noninverting) gain configurations
(with low values of gain resistor), a high level of input overdrive
can result in a large input error current, which may result in a
significant power dissipation in the input stage. This power
must be included when computing the junction temperature rise
due to total internal power.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD813 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
12
+IN2
10
+IN3
VS
11
VS
11
VS
11
9 –IN3
8 OUT3
6
–IN1
5
+IN1
4
VS+
DISABLE1 1
OUT2 14
–IN2 13
7 OUT1
DISABLE2 2
3
DISABLE3
0.057
(1.45)
0.124
(3.15)
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