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參數(shù)資料
| 型號(hào)： | AD818ARZ-REEL |
| 廠商： | Analog Devices Inc |
| 文件頁數(shù)： | 10/15頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC VIDEO OPAMP LP 8-SOIC T/R |
| 標(biāo)準(zhǔn)包裝： | 2,500 |
| 應(yīng)用： | 電壓反饋 |
| 電路數(shù)： | 1 |
| -3db帶寬： | 130MHz |
| 轉(zhuǎn)換速率： | 500 V/µs |
| 電流 - 電源： | 7mA |
| 電流 - 輸出 / 通道： | 50mA |
| 電壓 - 電源，單路/雙路(±)： | 5 V ~ 36 V，±2.5 V ~ 18 V |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 8-SO |
| 包裝： | 帶卷 (TR) |
REV.
–4–
AD818
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±18 V
Internal Power Dissipation
2
Plastic (N) . . . . . . . . . . . . . . . . . . . . . . See Derating Curves
Small Outline (R) . . . . . . . . . . . . . . . . . See Derating Curves
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . .
±V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . .
±6 V
Output Short-Circuit Duration . . . . . . . . See Derating Curves
Storage Temperature Range (N, R) . . . . . . . . –65
∞C to +125∞C
Operating Temperature Range . . . . . . . . . . . . –40
∞C to +85∞C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300
∞C
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2Specification is for device in free air: 8-lead plastic package,
JA = 90
∞C/W; 8-lead
SOIC package, JA = 155
∞C/W.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
AD818 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.
2.0
0
–50
90
1.5
0.5
–30
1.0
50
70
30
10
–10
80
–40
40
60
20
0
–20
AMBIENT TEMPERATURE ( C)
MAXIMUM
POWER
DISSIPATION
(W)
8-LEAD MINI-DIP PACKAGE
8-LEAD SOIC PACKAGE
TJ = 150 C
Figure 3. Maximum Power Dissipation vs. Temperature
for Different Package Types
METALLIZATION PHOTOGRAPH
Dimensions shown in inches and (mm)
–INPUT 2
+INPUT 3
6 OUTPUT
4
–VS
+VS
7
OFFSET
NULL
8
OFFSET
NULL
1
0.0559 (1.42)
0.0523
(1.33)
D
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