+VS = 15 V, V
參數(shù)資料
型號: AD8250ARMZ-R7
廠商: Analog Devices Inc
文件頁數(shù): 18/24頁
文件大?。?/td> 0K
描述: IC AMP INST ICMOS LDRIFT 10MSOP
標(biāo)準(zhǔn)包裝: 1
系列: iCMOS®
放大器類型: 儀表
電路數(shù): 1
輸出類型: 推挽式
轉(zhuǎn)換速率: 25 V/µs
-3db帶寬: 10MHz
電流 - 輸入偏壓: 5nA
電壓 - 輸入偏移: 70µV
電流 - 電源: 4.1mA
電流 - 輸出 / 通道: 37mA
電壓 - 電源,單路/雙路(±): 10 V ~ 30 V,±5 V ~ 15 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 10-TFSOP,10-MSOP(0.118",3.00mm 寬)
供應(yīng)商設(shè)備封裝: 10-MSOP
包裝: 標(biāo)準(zhǔn)包裝
產(chǎn)品目錄頁面: 771 (CN2011-ZH PDF)
配用: AD8250-EVALZ-ND - BOARD EVALUATION AD8250
其它名稱: AD8250ARMZ-R7DKR
Data Sheet
AD8250
Rev. C | Page 3 of 24
SPECIFICATIONS
+VS = 15 V, VS = 15 V, VREF = 0 V @ TA = 25°C, G = 1, RL = 2 k, unless otherwise noted.
Table 2.
Parameter
Conditions
Min
Typ
Max
Unit
COMMON-MODE REJECTION RATIO (CMRR)
CMRR to 60 Hz with 1 k Source Imbalance
+IN = IN = 10 V to +10 V
G = 1
80
98
dB
G = 2
86
104
dB
G = 5
94
110
dB
G = 10
98
110
dB
CMRR to 50 kHz
+IN = IN = 10 V to +10 V
G = 1
80
dB
G = 2
86
dB
G = 5
90
dB
G = 10
90
dB
NOISE
Voltage Noise, 1 kHz, RTI
G = 1
40
nV/√Hz
G = 2
27
nV/√Hz
G = 5
21
nV/√Hz
G = 10
18
nV/√Hz
0.1 Hz to 10 Hz, RTI
G = 1
2.5
μV p-p
G = 2
2.5
μV p-p
G = 5
1.5
μV p-p
G = 10
1.0
μV p-p
Current Noise, 1 kHz
5
pA/√Hz
Current Noise, 0.1 Hz to 10 Hz
60
pA p-p
VOLTAGE OFFSET
Offset RTI VOS
G = 1, 2, 5, 10
±(70 + 200/G)
±(200 + 600/G)
μV
Over Temperature
T = 40°C to +85°C
±(90 + 300/G)
±(260 + 900/G)
μV
Average Temperature Coefficient
T = 40°C to +85°C
±(0.6 + 1.5/G)
±(1.2 + 5/G)
μV/°C
Offset Referred to the Input vs. Supply (PSR)
VS = ±5 V to ±15 V
±(2 + 7/G)
±(6 + 20/G)
μV/V
INPUT CURRENT
Input Bias Current
5
30
nA
Over Temperature
T = 40°C to +85°C
40
nA
Average Temperature Coefficient
T = 40°C to +85°C
400
pA/°C
Input Offset Current
5
30
nA
Over Temperature
T = 40°C to +85°C
30
nA
Average Temperature Coefficient
T = 40°C to +85°C
160
pA/°C
DYNAMIC RESPONSE
Small Signal 3 dB Bandwidth
G = 1
10
MHz
G = 2
10
MHz
G = 5
10
MHz
G = 10
3
MHz
Settling Time 0.01%
ΔOUT = 10 V step
G = 1
585
ns
G = 2
605
ns
G = 5
605
ns
G = 10
648
ns
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