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參數(shù)資料
| 型號： | AD8275BRMZ |
| 廠商： | Analog Devices Inc |
| 文件頁數(shù)： | 11/16頁 |
| 文件大小： | 0K |
| 描述： | IC AMP DIFF R-R LDRIFT 8MSOP |
| 產(chǎn)品培訓(xùn)模塊： | Power Line Monitoring |
| 標(biāo)準(zhǔn)包裝： | 50 |
| 放大器類型： | 差分 |
| 電路數(shù)： | 1 |
| 輸出類型： | 滿擺幅 |
| 轉(zhuǎn)換速率： | 25 V/µs |
| -3db帶寬： | 15MHz |
| 電壓 - 輸入偏移： | 150µV |
| 電流 - 電源： | 1.9mA |
| 電流 - 輸出 / 通道： | 30mA |
| 電壓 - 電源，單路/雙路(±)： | 3.3 V ~ 15 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-TSSOP，8-MSOP（0.118"，3.00mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 8-MSOP |
| 包裝： | 管件 |
AD8275
Rev. A | Page 4 of 16
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Rating
Supply Voltage
18 V
Output Short-Circuit Current
See derating curve
Voltage at +IN, IN Pins
VS + 40 V, +VS 40 V
Voltage at REFx, +VS, VS, SENSE,
and OUT Pins
VS 0.5 V, +VS + 0.5 V
Current into REFx, +IN, IN, SENSE,
and OUT Pins
3 mA
Storage Temperature Range
65°C to +130°C
Specified Temperature Range
40°C to +85°C
Thermal Resistance (θJA)
135°C/W
Package Glass Transition Temperature
(TG)
140°C
ESD Human Body Model
2 kV
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
MAXIMUM POWER DISSIPATION
The maximum safe power dissipation in the AD8275 package is
limited by the associated rise in junction temperature (TJ) on
the die. The plastic encapsulating the die locally reaches the
junction temperature. At approximately 140°C, which is the
glass transition temperature, the plastic changes its properties.
Even temporarily exceeding this temperature limit can change
the stresses that the package exerts on the die, permanently
shifting the parametric performance of the AD8275. Exceeding
a junction temperature of 140°C for an extended period can
result in changes in silicon devices, potentially causing failure.
The still air thermal properties of the package and PCB (θJA),
the ambient temperature (TA), and the total power dissipated in
the package (PD) determine the junction temperature of the die.
The junction temperature is calculated as follows:
TJ = TA + (PD × θJA)
The power dissipated in the package (PD) is the sum of the
quiescent power dissipation and the power dissipated in the
package due to the load drive for all outputs. The quiescent
power is the voltage between the supply pins (VS) times the
quiescent current (IS). Assuming the load (RL) is referenced to
midsupply, the total drive power is VS/2 × IOUT, some of which is
dissipated in the package and some of which is dissipated in the
load (VOUT × IOUT).
The difference between the total drive power and the load
power is the drive power dissipated in the package.
PD = Quiescent Power + (Total Drive Power Load Power)
(
)
L
OUT
L
OUT
S
D
R
V
R
V
I
V
P
2
–
2
×
+
×
=
In single-supply operation with RL referenced to –VS, the worst
case is VOUT = VS/2.
Airflow increases heat dissipation, effectively reducing θJA. In
addition, more metal directly in contact with the package leads
from metal traces, through holes, ground, and power planes
reduces θJA.
Figure 3 shows the maximum safe power dissipation in the
package vs. the ambient temperature on a 4-layer JEDEC
standard board.
0
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
–40
0
–20
20
40
60
80
100
120
07546-
003
MA
XI
MU
M
PO
W
ER
D
ISSI
PA
T
IO
N
(W
)
AMBIENT TEMPERATURE (°C)
Figure 3. Maximum Power Dissipation vs. Ambient Temperature
ESD CAUTION
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