Parameter
Conditions
VS
Min
Typ
Max
Unit
OUTPUT CHARACTERISTICS
Output Voltage Swing
RLOAD = 500
±5 V
3.3
3.8
±V
RLOAD = 150
±5 V
3.2
3.6
±V
RLOAD = 1 k
±15 V
13.3
13.7
±V
RLOAD = 500
±15 V
12.8
13.4
±V
1.5
RLOAD = 500
0, +5 V
3.5
±V
Output Current
±15 V
50
mA
±5 V
40
mA
0, +5 V
30
mA
Short Circuit Current
±15 V
90
mA
Output Resistance
Open-Loop
8
MATCHING CHARACTERISTICS
Dynamic
Crosstalk
f = 5 MHz
±15 V
–80
dB
Gain Flatness Match
G = +1, f = 40 MHz
±15 V
0.2
dB
Skew Rate Match
G = –1
±15 V
10
V/
s
DC
Input Offset Voltage Match
TMIN to TMAX
±5 V, ±15 V
0.5
2
mV
Input Bias Current Match
TMIN to TMAX
±5 V, ±15 V
0.06
0.8
A
Open-Loop Gain Match
VO =
±10 V, R
L = 1 k
, T
MIN to TMAX
±15 V
0.01
0.15
mV/V
Common-Mode Rejection Ratio Match
VCM =
±12 V, T
MIN to TMAX
±15 V
80
100
dB
Power Supply Rejection Ratio Match
±5 V to ±15 V, T
MIN to TMAX
80
100
dB
POWER SUPPLY
Operating Range
Dual Supply
±2.5
±18
V
Single Supply
+5
+36
V
Quiescent Current
±5 V
14.0
15
mA
TMIN to TMAX
±5 V
14.0
15
mA
TMIN to TMAX
±5 V
15
mA
Power Supply Rejection Ratio
VS =
±5 V to ±15 V, T
MIN to TMAX
80
90
dB
*Full power bandwidth = slew rate/2
π V
PEAK.
Specifications subject to change without notice.
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±18 V
Internal Power Dissipation
2
Plastic DIP (N) . . . . . . . . . . . . . . . . . . See Derating Curves
Small Outline (R) . . . . . . . . . . . . . . . . . See Derating Curves
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . .
±V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . .
±6 V
Output Short Circuit Duration . . . . . . . . See Derating Curves
Storage Temperature Range (N, R) . . . . . . . . –65
°C to +125°C
Operating Temperature Range . . . . . . . . . . . . –40
°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . +300
°C
NOTES
1 Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2 Specification is for device in free air:
8-Lead Plastic DIP Package:
θ
JA = 100
°C/W
8-Lead SOIC Package:
θ
JA = 155
°C/W
2.0
0
–50
90
1.5
0.5
–30
1.0
50
70
30
10
–10
80
–40
40
60
20
0
–20
AMBIENT TEMPERATURE – C
MAXIMUM
POWER
DISSIPATION
–
Watts
8-LEAD MINI-DIP PACKAGE
8-LEAD SOIC PACKAGE
TJ = 150 C
Figure 3. Maximum Power Dissipation vs.
Temperature for Different Package Types
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the AD828 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
REV. C
AD828
–3–
ORDERING GUIDE
Temperature
Package
Model
Range
Description
Option
AD828AN
–40
°C to +85°C 8-Lead Plastic DIP N-8
AD828AR
–40
°C to +85°C 8-Lead Plastic SOIC SO-8
AD828AR-REEL7 –40
°C to +85°C 7" Tape and Reel
SO-8
AD828AR-REEL –40
°C to +85°C 13" Tape and Reel SO-8