@ VS = ±5 V, V
參數(shù)資料
型號: AD8513ARZ-REEL
廠商: Analog Devices Inc
文件頁數(shù): 14/20頁
文件大?。?/td> 0K
描述: IC OPAMP JFET 8MHZ QUAD 14SOIC
標(biāo)準(zhǔn)包裝: 2,500
放大器類型: J-FET
電路數(shù): 4
轉(zhuǎn)換速率: 20 V/µs
增益帶寬積: 8MHz
電流 - 輸入偏壓: 25pA
電壓 - 輸入偏移: 100µV
電流 - 電源: 2.2mA
電流 - 輸出 / 通道: 70mA
電壓 - 電源,單路/雙路(±): ±4.5 V ~ 18 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 14-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 14-SOIC
包裝: 帶卷 (TR)
AD8510/AD8512/AD8513
Rev. I | Page 3 of 20
SPECIFICATIONS
@ VS = ±5 V, VCM = 0 V, TA = 25°C, unless otherwise noted.
Table 1.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage (B Grade)1
VOS
0.08
0.4
mV
40°C < TA < +125°C
0.8
mV
Offset Voltage (A Grade)
VOS
0.1
0.9
mV
40°C < TA < +125°C
1.8
mV
Input Bias Current
IB
21
75
pA
40°C < TA < +85°C
0.7
nA
40°C < TA < +125°C
7.5
nA
Input Offset Current
IOS
5
50
pA
40°C < TA < +85°C
0.3
nA
40°C < TA < +125°C
0.5
nA
Input Capacitance
Differential
12.5
pF
Common Mode
11.5
pF
Input Voltage Range
2.0
+2.5
V
Common-Mode Rejection Ratio
CMRR
VCM = 2.0 V to +2.5 V
86
100
dB
Large-Signal Voltage Gain
AVO
RL = 2 kΩ, VO = 3 V to +3 V
65
107
V/mV
Offset Voltage Drift (B Grade)1
ΔVOS/ΔT
0.9
5
μV/°C
Offset Voltage Drift (A Grade)
ΔVOS/ΔT
1.7
12
μV/°C
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
RL = 10 kΩ
4.1
4.3
V
Output Voltage Low
VOL
RL = 10 kΩ, 40°C < TA < +125°C
4.9
4.7
V
Output Voltage High
VOH
RL = 2 kΩ
3.9
4.2
V
Output Voltage Low
VOL
RL = 2 kΩ, 40°C < TA < +125°C
4.9
4.5
V
Output Voltage High
VOH
RL = 600 Ω
3.7
4.1
V
Output Voltage Low
VOL
RL = 600 Ω, 40°C < TA < +125°C
4.8
4.2
V
Output Current
IOUT
±40
±54
mA
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
VS = ±4.5 V to ±18 V
86
130
dB
Supply Current/Amplifier
ISY
AD8510/AD8512/AD8513
VO = 0 V
2.0
2.3
mA
AD8510/AD8512
40°C < TA < +125°C
2.5
mA
AD8513
40°C < TA < +125°C
2.75
mA
DYNAMIC PERFORMANCE
Slew Rate
SR
RL = 2 kΩ
20
V/μs
Gain Bandwidth Product
GBP
8
MHz
Settling Time
tS
To 0.1%, 0 V to 4 V step, G = +1
0.4
μs
Total Harmonic Distortion (THD) + Noise
THD + N
1 kHz, G = +1, RL = 2 kΩ
0.0005
%
Phase Margin
φM
44.5
Degrees
NOISE PERFORMANCE
Voltage Noise Density
en
f = 10 Hz
34
nV/√Hz
f = 100 Hz
12
nV/√Hz
f = 1 kHz
8.0
10
nV/√Hz
f = 10 kHz
7.6
nV/√Hz
Peak-to-Peak Voltage Noise
en p-p
0.1 Hz to 10 Hz bandwidth
2.4
5.2
μV p-p
1 AD8510/AD8512 only.
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