AD8519/AD8529
Rev. D | Page 3 of 16
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
VS = 5.0 V, V = 0 V, VCM = 2.5 V, TA = 25°C, unless otherwise noted.
Table 1.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
VOS
AD8519AKS, AD8519ART
600
1100
μV
40°C ≤ TA ≤ +125°C
800
1300
μV
AD8519AR (R-8), AD8529
600
1000
μV
40°C ≤ TA ≤ +125°C
1100
μV
Input Bias Current
IB
300
nA
40°C ≤ TA ≤ +125°C
400
nA
Input Offset Current
IOS
±50
nA
40°C ≤ TA ≤ +125°C
±100
nA
Input Voltage Range
VCM
0
4
V
Common-Mode Rejection Ratio
CMRR
0 V ≤ VCM ≤ 4.0 V, 40°C ≤ TA ≤ +125°C
63
100
dB
Large Signal Voltage Gain
AVO
RL = 2 kΩ, 0.5 V < VOUT < 4.5 V
30
V/mV
RL = 10 kΩ, 0.5 V < VOUT < 4.5 V
50
100
V/mV
RL = 10 kΩ, 40°C ≤ TA ≤ +125°C
30
V/mV
Offset Voltage Drift
VOS/T
2
μV/°C
Bias Current Drift
IB/T
500
pA/°C
OUTPUT CHARACTERISTICS
Output Voltage Swing High
VOH
IL = 250 μA
40°C ≤ TA ≤ +125°C
4.90
V
IL = 5 mA
4.80
V
Output Voltage Swing Low
VOL
IL = 250 μA
40°C ≤ TA ≤ +125°C
80
mV
IL = 5 mA
200
mV
Short-Circuit Current
ISC
Short to ground, instantaneous
±70
mA
Maximum Output Current
IOUT
±25
mA
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
VS = 2.7 V to 7 V
110
dB
40°C ≤ TA ≤ +125°C
80
dB
Supply Current/Amplifier
ISY
VOUT = 2.5 V
600
1200
μA
40°C ≤ TA ≤ +125°C
1400
μA
DYNAMIC PERFORMANCE
Slew Rate
SR
1 V < VOUT < 4 V, RL = 10 kΩ
2.9
V/μs
Settling Time
tS
To 0.01%
1200
ns
Gain Bandwidth Product
GBP
8
MHz
Phase Margin
Φm
60
Degrees
NOISE PERFORMANCE
Voltage Noise
en p-p
0.1 Hz to 10 Hz
0.5
μV p-p
Voltage Noise Density
en
f = 1 kHz
10
nV/√Hz
Current Noise Density
in
f = 1 kHz
0.4
pA/√Hz