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參數(shù)資料
型號(hào): AD8539ARZ
廠商: Analog Devices Inc
文件頁(yè)數(shù): 20/24頁(yè)
文件大?。?/td> 0K
描述: IC OPAMP CHOPPER 430KHZ LP 8SOIC
標(biāo)準(zhǔn)包裝: 98
放大器類型: 斷路器(零漂移)
電路數(shù): 2
轉(zhuǎn)換速率: 0.4 V/µs
增益帶寬積: 430kHz
電流 - 輸入偏壓: 15pA
電壓 - 輸入偏移: 5µV
電流 - 電源: 170µA
電流 - 輸出 / 通道: 25mA
電壓 - 電源,單路/雙路(±): 2.7 V ~ 5.5 V,±1.35 V ~ 2.75 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 8-SO
包裝: 管件
產(chǎn)品目錄頁(yè)面: 773 (CN2011-ZH PDF)
Data Sheet
AD8538/AD8539
Rev. B | Page 5 of 24
AD8539 ELECTRICAL SPECIFICATIONS
@ VS = 5.0 V, VCM = 2.5 V, VO = 2.5 V, TA = 25°C, unless otherwise specified.
Table 3.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
VOS
5
15
V
40°C ≤ TA ≤ +125°C
30
V
Input Bias Current
IB
15
60
pA
40°C ≤ TA ≤ +85°C
35
125
pA
40°C ≤ TA ≤ +125°C
0.7
1.0
nA
Input Offset Current
IOS
20
70
pA
40°C ≤ TA ≤ +125°C
400
pA
Input Voltage Range
0
5
V
40°C ≤ TA ≤ +125°C
0.2
4.8
V
Common-Mode Rejection Ratio
CMRR
VCM = 0 V to 5 V
115
135
dB
40°C ≤ TA ≤ +125°C, VCM = 0.2 V to 4.8 V
100
130
dB
Large Signal Voltage Gain
AVO
RL = 10 k, VO = 0.1 V to 4.9 V
110
130
dB
40°C ≤ TA ≤ +125°C
110
125
dB
Offset Voltage Drift
VOS/T
40°C ≤ TA ≤ +125°C
0.03
0.1
V/°C
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
RL = 100 k to ground
4.99
4.994
V
40°C ≤ TA ≤ +125°C, RL = 100 k to ground
4.98
V
RL = 10 k to ground
4.95
4.97
V
40°C ≤ TA ≤ +125°C, RL = 10 k to ground
4.94
V
Output Voltage Low
VOL
RL = 100 k to V+
5
7
mV
40°C ≤ TA ≤ +125°C, RL = 100 k to V+
6
8
mV
RL = 10 k to V+
20
25
mV
40°C ≤ TA ≤ +125°C, RL = 10 k to V+
24
30
mV
Short-Circuit Limit
ISC
±25
mA
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
VS = 2.7 V to 5.0 V
105
125
dB
40°C ≤ TA ≤ +125°C
100
125
dB
Supply Current/Amplifier
ISY
IO = 0
170
210
A
40°C ≤ TA ≤ +125°C
225
A
DYNAMIC PERFORMANCE
Slew Rate
SR
RL =10 k
0.4
V/s
Settling Time 0.01%
tS
G = ±1, 2 V step, CL = 20 pF, RL = 1 k
10
μs
Overload Recovery Time
0.05
ms
Gain Bandwidth Product
GBP
430
kHz
Phase Margin
M
RL = 10 k, RL = 100 k, CL = 20 pF
65
Degrees
NOISE PERFORMANCE
Voltage Noise
en p-p
f = 0.1 Hz to 10 Hz
1.2
V p-p
Voltage Noise Density
en
f = 1 kHz
52
nV/√Hz
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