VSY
參數(shù)資料
型號(hào): AD8548ARZ-R7
廠商: Analog Devices Inc
文件頁(yè)數(shù): 5/7頁(yè)
文件大?。?/td> 0K
描述: IC AMP QUAD MICROPWR 16V 14SOIC
標(biāo)準(zhǔn)包裝: 1,000
放大器類型: 通用
電路數(shù): 4
輸出類型: 滿擺幅
轉(zhuǎn)換速率: 0.07 V/µs
增益帶寬積: 200kHz
電流 - 輸入偏壓: 5pA
電壓 - 輸入偏移: 4000µV
電流 - 電源: 18µA
電流 - 輸出 / 通道: 12mA
電壓 - 電源,單路/雙路(±): 2.7 V ~ 18 V,±1.35 V ~ 9 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 14-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 14-SOIC
包裝: 帶卷 (TR)
Preliminary Technical Data
AD8548
Rev. PrA | Page 5 of 7
ELECTRICAL CHARACTERISTICS—18 V OPERATION
VSY = 18 V, VCM = VSY/2 V, TA = 25°C, unless otherwise specified.
Table 4.
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
VOS
VCM = 0 V to 18 V
4
V
VCM = 0.3 V to 17.7 V; 40°C ≤ TA ≤ +85°C
tbd
mV
VCM = 0 V to 18 V; 40°C ≤ TA ≤ +85°C
tbd
mV
VCM = 0.3 V to 17.7 V; 40°C ≤ TA ≤ +125°C
tbd
mV
VCM = 0 V to 18 V; 40°C ≤ TA ≤ +125°C
tbd
mV
Input Bias Current
IB
5
20
pA
40°C ≤ TA ≤ +125°C
2.9
nA
Input Offset Current
IOS
40
pA
40°C ≤ TA ≤ +125°C
500
pA
Input Voltage Range
0
18
V
Common-Mode Rejection Ratio
CMRR
VCM = 0 V to 18 V
95
110
dB
VCM = 0.3 V to 17.7 V; 40°C ≤ TA ≤ +85°C
83
dB
VCM = 0 V to 18 V; 40°C ≤ TA ≤ +85°C
74
dB
VCM = 0.3 V to 17.7 V; 40°C ≤ TA ≤ +125°C
80
dB
VCM = 0 V to 18 V; 40°C ≤ TA ≤ +125°C
67
dB
Large Signal Voltage Gain
AVO
RL = 100 k, VO = 0.5 V to 17.5 V
110
120
dB
40°C ≤ TA ≤ +85°C
105
dB
40°C ≤ TA ≤ +125°C
73
dB
Offset Voltage Drift
ΔVOS/ΔT
2
μV/°C
Input Resistance
RIN
10
G
Input Capacitance, Differential Mode
CINDM
3.5
pF
Input Capacitance, Common Mode
CINCM
10.5
pF
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
RL = 100 k to VCM; 40°C ≤ TA ≤ +125°C
17.97
V
Output Voltage Low
VOL
RL = 100 k to VCM; 40°C ≤ TA ≤ +125°C
30
mV
Short-Circuit Current
ISC
±12
mA
Closed-Loop Output Impedance
ZOUT
f = 1 kHz, AV = 1
15
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
VSY = 2.7 V to 18 V
105
125
dB
40°C ≤ TA ≤ +125°C
70
dB
Supply Current per Amplifier
ISY
IO = 0 mA
18
22
A
40°C ≤ TA ≤ +125°C
33
A
DYNAMIC PERFORMANCE
Slew Rate
SR
RL = 1 M, CL = 10 pF, AV = 1
70
V/ms
Settling Time to 0.1%
ts
VIN = 1 V step, RL = 100 k, CL = 10 pF
12
s
Gain Bandwidth Product
GBP
RL = 1 M, CL = 10 pF, AV = 1
200
kHz
Phase Margin
ΦM
RL = 1 M, CL = 10 pF, AV = 1
60
Degrees
Channel Separation
CS
f = 10 kHz, RL = 1 M
105
dB
EMI Rejection Ratio of IN+
EMIRR
VIN = 100 mVPEAK; f = 400 MHz, 900 MHz,
1800 MHz, 2400 MHz
90
dB
NOISE PERFORMANCE
Voltage Noise
en p-p
f = 0.1 Hz to 10 Hz
5
V p-p
Voltage Noise Density
en
f = 1 kHz
50
nV/√Hz
f = 10 kHz
45
nV/√Hz
Current Noise Density
in
f = 1 kHz
0.1
pA/√Hz
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