VS = 5.0 V, VCM
參數(shù)資料
型號(hào): AD8592ARM-REEL
廠商: Analog Devices Inc
文件頁數(shù): 11/16頁
文件大小: 0K
描述: IC OPAMP GP R-R CMOS 3MHZ 10MSOP
標(biāo)準(zhǔn)包裝: 1
放大器類型: 通用
電路數(shù): 2
輸出類型: 滿擺幅
轉(zhuǎn)換速率: 5 V/µs
增益帶寬積: 3MHz
電流 - 輸入偏壓: 5pA
電壓 - 輸入偏移: 2000µV
電流 - 電源: 1.25mA
電流 - 輸出 / 通道: 250mA
電壓 - 電源,單路/雙路(±): 2.5 V ~ 6 V,±1.25 V ~ 3 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 10-TFSOP,10-MSOP(0.118",3.00mm 寬)
供應(yīng)商設(shè)備封裝: 10-MSOP
包裝: 標(biāo)準(zhǔn)包裝
產(chǎn)品目錄頁面: 767 (CN2011-ZH PDF)
其它名稱: AD8592ARM-REELDKR
AD8591/AD8592/AD8594
Rev. B | Page 4 of 16
VS = 5.0 V, VCM = 2.5 V, TA = 25°C, unless otherwise noted.
Table 2.
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
VOS
2
25
mV
40°C < TA < +85°C
30
mV
Input Bias Current
IB
5
50
pA
40°C < TA < +85°C
60
pA
Input Offset Current
IOS
1
25
pA
40°C < TA < +85°C
30
pA
Input Voltage Range
0
5
V
Common-Mode Rejection Ratio
CMRR
VCM = 0 V to 5 V
38
47
dB
Large Signal Voltage Gain
AVO
RL = 2 kΩ, VO = 0.5 V to 4.5 V
15
30
V/mV
Offset Voltage Drift
ΔVOS/ΔT
40°C < TA < +85°C
20
μV/°C
Bias Current Drift
ΔIB/ΔT
40°C < TA < +85°C
50
fA/°C
Offset Current Drift
ΔIOS/ΔT
40°C < TA < +85°C
20
fA/°C
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
IL = 10 mA
4.9
4.94
V
40°C to +85°C
4.85
V
Output Voltage Low
VOL
IL = 10 mA
50
100
mV
40°C to +85°C
125
mV
Output Current
IOUT
±250
mA
Open-Loop Impedance
ZOUT
f = 1 MHz, AV = 1
40
Ω
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
VS = 2.5 V to 6 V
45
55
dB
Supply Current per Amplifier
ISY
VO = 0 V
1.25
mA
40°C < TA < +85°C
1.75
mA
Supply Current Shutdown Mode
ISD
All amplifiers shut down
0.1
1
μA
40°C < TA < +85°C
1
μA
ISD1
Amplifier 1 shut down (AD8592)
1.6
mA
ISD2
Amplifier 2 shut down (AD8592)
1.6
mA
SHUTDOWN INPUTS
Logic High Voltage
VINH
40°C < TA < +85°C
2.4
V
Logic Low Voltage
VINL
40°C < TA < +85°C
0.8
V
Logic Input Current
IIN
40°C < TA < +85°C
1
μA
DYNAMIC PERFORMANCE
Slew Rate
SR
RL = 2 kΩ
5
V/μs
Full Power Bandwidth
BWP
1% distortion
325
kHz
Settling Time
tS
To 0.01%
1.6
μs
Gain Bandwidth Product
GBP
3
MHz
Phase Margin
Φo
70
Degrees
Channel Separation
CS
f = 1 kHz, RL = 10 kΩ
65
dB
NOISE PERFORMANCE
Voltage Noise Density
en
f = 1 kHz
45
nV/√Hz
f = 10 kHz
30
nV/√Hz
Current Noise Density
in
f = 1 kHz
0.05
pA/√Hz
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