VS
參數(shù)資料
型號(hào): AD8602WARZ-RL
廠商: Analog Devices Inc
文件頁(yè)數(shù): 18/24頁(yè)
文件大小: 0K
描述: IC OPAMP GP RRIO PREC CMOS 8SOIC
標(biāo)準(zhǔn)包裝: 2,500
系列: DigiTrim®
放大器類(lèi)型: 通用
電路數(shù): 2
輸出類(lèi)型: 滿擺幅
轉(zhuǎn)換速率: 6 V/µs
增益帶寬積: 8.4MHz
電流 - 輸入偏壓: 0.2pA
電壓 - 輸入偏移: 80µV
電流 - 電源: 750µA
電流 - 輸出 / 通道: 50mA
電壓 - 電源,單路/雙路(±): 2.7 V ~ 5.5 V
工作溫度: -40°C ~ 125°C
安裝類(lèi)型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 8-SO
包裝: 帶卷 (TR)
AD8601/AD8602/AD8604
Rev. G | Page 3 of 24
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
VS = 3 V, VCM = VS/2, TA = 25°C, unless otherwise noted.
Table 1.
A Grade
D Grade
Parameter
Symbol
Conditions
Min
Typ
Max
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage (AD8601/AD8602)
VOS
0 V ≤ VCM ≤ 1.3 V
80
500
1100
6000
μV
40°C ≤ TA ≤ +85°C
700
7000
μV
40°C ≤ TA ≤ +125°C
1100
7000
μV
0 V ≤ VCM ≤ 3 V1
350
750
1300
6000
μV
40°C ≤ TA ≤ +85°C
1800
7000
μV
40°C ≤ TA ≤ +125°C
2100
7000
μV
Offset Voltage (AD8604)
VOS
VCM = 0 V to 1.3 V
80
600
1100
6000
μV
40°C ≤ TA ≤ +85°C
800
7000
μV
40°C ≤ TA ≤ +125°C
1600
7000
μV
VCM = 0 V to 3.0 V1
350
800
1300
6000
μV
40°C ≤ TA ≤ +85°C
2200
7000
μV
40°C ≤ TA ≤ +125°C
2400
7000
μV
Input Bias Current
IB
0.2
60
0.2
200
pA
40°C ≤ TA ≤ +85°C
25
100
25
200
pA
40°C ≤ TA ≤ +125°C
150
1000
150
1000
pA
Input Offset Current
IOS
0.1
30
0.1
100
pA
40°C ≤ TA ≤ +85°C
50
100
pA
40°C ≤ TA ≤ +125°C
500
pA
Input Voltage Range
0
3
0
3
V
Common-Mode Rejection Ratio
CMRR
VCM = 0 V to 3 V
68
83
52
65
dB
Large Signal Voltage Gain
AVO
VO = 0.5 V to 2.5 V,
RL = 2 kΩ, VCM = 0 V
30
100
20
60
V/mV
Offset Voltage Drift
ΔVOS/ΔT
2
μV/°C
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
IL = 1.0 mA
2.92
2.95
2.92
2.95
V
–40°C ≤ TA ≤ +125°C
2.88
V
Output Voltage Low
VOL
IL = 1.0 mA
20
35
20
35
mV
40°C ≤ TA ≤ +125°C
50
mV
Output Current
IOUT
±30
mA
Closed-Loop Output Impedance
ZOUT
f = 1 MHz, AV = 1
12
Ω
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
VS = 2.7 V to 5.5 V
67
80
56
72
dB
Supply Current/Amplifier
ISY
VO = 0 V
680
1000
680
1000
μA
40°C ≤ TA ≤ +125°C
1300
μA
DYNAMIC PERFORMANCE
Slew Rate
SR
RL = 2 kΩ
5.2
V/μs
Settling Time
tS
To 0.01%
<0.5
μs
Gain Bandwidth Product
GBP
8.2
MHz
Phase Margin
Φo
50
Degrees
NOISE PERFORMANCE
Voltage Noise Density
en
f = 1 kHz
33
nV/√Hz
f = 10 kHz
18
nV/√Hz
Current Noise Density
in
0.05
pA/√Hz
1 For VCM between 1.3 V and 1.8 V, VOS may exceed specified value.
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