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參數(shù)資料
| 型號： | AD8606ARZ |
| 廠商： | Analog Devices Inc |
| 文件頁數(shù)： | 10/24頁 |
| 文件大小： | 0K |
| 描述： | IC OPAMP GP R-R CMOS 10MHZ 8SOIC |
| 產(chǎn)品培訓(xùn)模塊： | Pulse Oximetry Solutions |
| 標(biāo)準(zhǔn)包裝： | 98 |
| 系列： | DigiTrim® |
| 放大器類型： | 通用 |
| 電路數(shù)： | 2 |
| 輸出類型： | 滿擺幅 |
| 轉(zhuǎn)換速率： | 5 V/µs |
| 增益帶寬積： | 10MHz |
| 電流 - 輸入偏壓： | 0.2pA |
| 電壓 - 輸入偏移： | 80µV |
| 電流 - 電源： | 1mA |
| 電流 - 輸出 / 通道： | 80mA |
| 電壓 - 電源，單路/雙路(±)： | 2.7 V ~ 5.5 V |
| 工作溫度： | -40°C ~ 125°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 8-SO |
| 包裝： | 管件 |
| 產(chǎn)品目錄頁面： | 767 (CN2011-ZH PDF) |
AD8605/AD8606/AD8608
Data Sheet
Rev. N | Page 18 of 24
Figure 50 shows a scope of the output at the snubber circuit.
The overshoot is reduced from over 70% to less than 5%, and
the ringing is eliminated by the snubber. Optimum values for RS
and CS are determined experimentally.
TIME (10s/DIV)
VO
LT
A
G
E
(
100mV
/DI
V
)
VS = ±2.5V
AV = 1
RL = 10k
RS = 90
CL = 1000pF
CS = 700pF
02731-
048
Figure 50. Capacitive Load Drive with Snubber
Table 5 summarizes a few optimum values for capacitive loads.
Table 5.
CL (pF)
RS ()
CS (pF)
500
100
1000
70
1000
2000
60
800
An alternate technique is to insert a series resistor inside the
feedback loop at the output of the amplifier. Typically, the value
of this resistor is approximately 100 . This method also reduces
overshoot and ringing but causes a reduction in the maximum
output swing.
LIGHT SENSITIVITY
The AD8605ACB (WLCSP package option) is essentially a
silicon die with additional postfabrication dielectric and
intermetallic processing designed to contact solder bumps
on the active side of the chip. With this package type, the die
is exposed to ambient light and is subject to photoelectric
effects. Light sensitivity analysis of the AD8605ACB mounted
on standard PCB material reveals that only the input bias
current (IB) parameter is impacted when the package is
illuminated directly by high intensity light. No degradation in
electrical performance is observed due to illumination by low
increases with increasing wavelength and intensity of incident
light; IB can reach levels as high as 4500 pA at a light intensity of
3 mW/cm2 and a wavelength of 850 nm. The light intensities
shown in Figure 51 are not normal for most applications, that is,
even though direct sunlight can have intensities of 50 mW/cm2,
office ambient light can be as low as 0.1 mW/cm2.
WAVELENGTH (nm)
3500
0
350
INP
UT
BI
AS
CURRE
NT
(
p
A)
2500
3000
2000
500
1000
1500
450
550
650
750
850
1mW/cm2
4000
4500
5000
3mW/cm2
2mW/cm2
02731-
050
Figure 51. AD8605ACB Input Bias Current Response to Direct Illumination of
Varying Intensity and Wavelength
When the WLCSP package is assembled on the board with the
bump side of the die facing the PCB, reflected light from the
PCB surface is incident on active silicon circuit areas and results
in the increased IB. No performance degradation occurs due to
illumination of the backside (substrate) of the AD8605ACB.
The AD8605ACB is particularly sensitive to incident light with
wavelengths in the near infrared range (NIR, 700 nm to 1000 nm).
Photons in this waveband have a longer wavelength and lower
energy than photons in the visible (400 nm to 700 nm) and near
ultraviolet (NUV, 200 nm to 400 nm) bands; therefore, they can
penetrate more deeply into the active silicon. Incident light with
wavelengths greater than 1100 nm has no photoelectric effect
on the AD8605ACB because silicon is transparent to wavelengths
in this range. The spectral content of conventional light sources
varies. Sunlight has a broad spectral range, with peak intensity
in the visible band that falls off in the NUV and NIR bands;
fluorescent lamps have significant peaks in the visible but not
the NUV or NIR bands.
Efforts have been made at a product level to reduce the effect of
ambient light; the under bump metal (UBM) has been designed
to shield the sensitive circuit areas on the active side (bump
side) of the die. However, if an application encounters any light
sensitivity with the AD8605ACB, shielding the bump side of the
WLCSP package with opaque material should eliminate this
effect. Shielding can be accomplished using materials such as
silica-filled liquid epoxies that are used in flip-chip underfill
techniques.
WLCSP ASSEMBLY CONSIDERATIONS
For detailed information on the WLCSP PCB assembly and
reliability, see Application Note AN-617, MicroCSP Wafer
Level Chip Scale Package.
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