Electrical characteristics at VSY
參數(shù)資料
型號(hào): AD8617WARZ-RL
廠(chǎng)商: Analog Devices Inc
文件頁(yè)數(shù): 10/16頁(yè)
文件大?。?/td> 0K
描述: IC OPAMP GP R-R CMOS DUAL 8SOIC
標(biāo)準(zhǔn)包裝: 2,500
放大器類(lèi)型: 通用
電路數(shù): 2
輸出類(lèi)型: 滿(mǎn)擺幅
轉(zhuǎn)換速率: 0.1 V/µs
增益帶寬積: 400kHz
電流 - 輸入偏壓: 0.2pA
電壓 - 輸入偏移: 400µV
電流 - 電源: 38µA
電流 - 輸出 / 通道: 80mA
電壓 - 電源,單路/雙路(±): 1.8 V ~ 5 V,±0.9 V ~ 2.5 V
工作溫度: -40°C ~ 125°C
安裝類(lèi)型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 8-SO
包裝: 帶卷 (TR)
AD8613/AD8617/AD8619
Rev. E | Page 3 of 16
SPECIFICATIONS
Electrical characteristics at VSY = 5 V, VCM = VSY/2, TA = 25°C, unless otherwise noted.
Table 1.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
VOS
0.3 V < VCM < +5.3 V
0.4
2.2
mV
40°C < TA < +125°C, 0.3 V < VCM < +5.2 V
2.2
mV
Offset Voltage Drift
VOS/T
40°C < TA < +125°C
1
4.5
μV/°C
AD8613
2.5
7.0
μV/°C
Input Bias Current
IB
0.2
1
pA
40°C < TA < +85°C
110
pA
40°C < TA < +125°C
780
pA
Input Offset Current
IOS
0.1
0.5
pA
40°C < TA < +85°C
50
pA
40°C < TA < +125°C
250
pA
Input Voltage Range
IVR
0
5
V
Common-Mode Rejection Ratio
CMRR
0 V < VCM < 5 V
95
dB
40°C < TA < +125°C
68
dB
Large Signal Voltage Gain
AVO
RL = 10 kΩ, 0.5 V < VO < 4.5 V
235
500
V/mV
Input Capacitance
CDIFF
1.9
pF
CCM
2.5
pF
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
IL = 1 mA
4.95
4.98
V
40°C to +125°C
4.9
V
IL = 10 mA
4.7
V
40°C to +125°C
4.50
V
Output Voltage Low
VOL
IL = 1 mA
20
30
mV
40°C to +125°C
50
mV
IL = 10 mA
190
275
mV
40°C to +125°C
335
mV
Short-Circuit Current
ISC
±80
mA
Closed-Loop Output Impedance
ZOUT
f = 10 kHz, AV = 1
15
Ω
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
1.8 V < VSY < 5 V
67
94
dB
40°C < TA < +125°C
64
dB
Supply Current/Amplifier
ISY
VO = VSY/2
38
μA
40°C <TA < +125°C
50
μA
DYNAMIC PERFORMANCE
Slew Rate
SR
RL = 10 kΩ
0.1
V/μs
Settling Time to 0.1%
tS
G = ±1, VIN = 2 V step, CL = 20 pF, RL = 1 kΩ
23
μs
Gain Bandwidth Product
GBP
RL = 100 kΩ
400
kHz
RL = 10 kΩ
350
kHz
Phase Margin
M
RL = 10 kΩ, RL = 100 kΩ, CL = 20 pF
70
Degrees
NOISE PERFORMANCE
Peak-to-Peak Noise
en p-p
0.1 Hz to 10 Hz
2.3
3.5
μV
Voltage Noise Density
en
f = 1 kHz
25
nV/√Hz
f = 10 kHz
22
nV/√Hz
Current Noise Density
in
f = 1 kHz
0.05
pA/√Hz
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