參數(shù)資料
型號: AD8643TRZ-EP-R7
廠商: Analog Devices Inc
文件頁數(shù): 9/12頁
文件大?。?/td> 0K
描述: IC OPAMP JFET R-R ENH 14SOIC
標準包裝: 1,000
放大器類型: J-FET
電路數(shù): 4
輸出類型: 滿擺幅
轉(zhuǎn)換速率: 3 V/µs
增益帶寬積: 3.5MHz
電流 - 輸入偏壓: 0.25pA
電壓 - 輸入偏移: 70µV
電流 - 電源: 200µA
電流 - 輸出 / 通道: 12mA
電壓 - 電源,單路/雙路(±): 5 V ~ 26 V,±2.5 V ~ 13 V
工作溫度: -55°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 14-SOIC(0.154",3.90mm 寬)
供應商設(shè)備封裝: 14-SOICN
包裝: 帶卷 (TR)
AD8643-EP
Rev. 0 | Page 6 of 12
TYPICAL PERFORMANCE CHARACTERISTICS
0
10
20
30
40
50
60
70
FR
E
Q
U
E
N
C
Y
–0
.6
0
–0
.5
5
–0
.5
0
–0
.4
5
–0
.4
0
–0
.3
5
–0
.3
0
–0
.2
5
–0
.2
0
–0
.1
5
–0
.1
0
–0
.0
5
0
0.
05
0.
10
0.
15
0.
20
0.
25
0.
30
0.
35
0.
40
0.
45
0.
50
0.
55
0.
60
VOS (mV)
80
VSY = ±13V
095
90-
002
Figure 2. Input Offset Voltage
NUM
BE
R
O
F
AM
P
L
IF
IE
R
S
OFFSET VOLTAGE (
μV/°C)
0
0.
5
1.
0
1.
5
2.
0
2.
5
3.
0
3.
5
4.
0
4.
5
5.
0
5.
5
6.
0
6.
5
7.
0
7.
5
8.
0
8.
5
9.
0
9.
5
10.
0
16
14
12
10
8
6
4
2
0
VSY = ±13V
0959
0-
003
Figure 3. Offset Voltage Drift
0
10
20
30
40
50
60
70
FR
E
Q
U
E
N
C
Y
–0
.6
0
–0
.5
5
–0
.5
0
–0
.4
5
–0
.4
0
–0
.3
5
–0
.3
0
–0
.2
5
–0
.2
0
–0
.1
5
–0
.1
0
–0
.0
5
0
0.
05
0.
10
0.
15
0.
20
0.
25
0.
30
0.
3
5
0.
40
0.
45
0.
50
0.
55
0.
60
VOS (mV)
VSY = ±2.5V
095
90-
004
Figure 4. Input Offset Voltage
N
U
M
B
E
R
OF
A
M
P
L
IFI
E
R
S
TCVOS (μV/°C)
0
0.
5
1.
0
1.
5
2.
0
2.
5
3.
0
3.
5
4.
0
4.
5
5.
0
5.
5
6.
0
6.
5
7.
0
7.
5
8.
0
8.
5
9.
0
9.
5
10
.0
0
2
4
6
8
10
12
14
16
18
20
VSY = 5V
VCM = 1.5V
0
959
0-
00
5
Figure 5. Offset Voltage Drift
–0.5
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
IN
P
UT
BI
A
S
(
p
A)
–15 –13 –11
–9
–7
–5
–3
–1
1
3
5
7
9
11
13
15
VCM (V)
VSY = ±13V
TA = 25°C
09
590
-006
Figure 6. Input Bias Current vs. VCM
INP
UT
BI
A
S
CURRE
NT
(
p
A)
0.1
1
10
100
1000
50
75
0
25
100
125
150
TEMPERATURE (
°C)
VSY = ±13V
095
90-
0
08
Figure 7. Input Bias Current vs. Temperature
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