AD8698
Rev. 0 | Page 3 of 20
SPECIFICATIONS
VS = ±15 V, VCM = 0 V (@TA = 25oC, unless otherwise noted.)
Table 1.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
VOS
20
100
V
40°C < TA < +85°C
300
V
Offset Voltage Drift
V
OS
/
T
40°C < TA < +85°C
0.6
2
V/°C
Input Bias Current
IB
700
pA
40°C < TA < +85°C
1500
pA
Input Offset Current
IOS
700
pA
40°C < TA < +85°C
1500
pA
Input Voltage Range
IVR
40°C < TA < +85°C
13.5V
13.5
V
Common-Mode Rejection Ratio
CMRR
VCM = ±13.5 V
118
132
dB
Large Signal Voltage Gain
AVO
RL = 2 k
, VO = ±13.5 V
900
1450
V/mV
Input Capacitance
CDIFF
6.5
pF
CCM
4.6
pF
OUTPUT CHARACTERISTICS
Output Voltage Swing
(Ref. to GND)
VOH
IL = 1 mA,
40°C < TA < +85°C
14.85
14.93
V
VOH
IL = 5 mA,
40°C < TA < +85°C
14.6
14.8
V
(Ref. to GND)
VOL
IL = 1 mA,
40°C < TA < +85°C
14.93
14.6
V
VOL
IL = 5 mA,
40°C < TA < +85°C
14.82
14.5
V
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
±2.5 V < VS < ±15 V
114
132
dB
Supply Current
ISY
VO = 0 V
2.8
3.2
mA
40°C < TA < +85°C
3.8
mA
Supply Voltage
VS
40°C < TA < +85°C
±2.5
±15
V
DYNAMIC PERFORMANCE
Slew Rate
SR
RL = 2 k
0.4
V/s
Gain Bandwidth Product
GBP
1
MHz
Phase Margin
O
60
Degrees
NOISE PERFORMANCE
Input Noise Voltage
en p-p
0.1 Hz < f < 10 Hz
0.6
V p-p
Input Voltage Noise Density
en
f = 10 Hz
15
nV/
√Hz
Input Voltage Noise Density
en
f = 1 kHz
8
nV/
√Hz
Current Noise Density
in
f = 1 kHz
0.2
pA/
√Hz