Supply Voltage (+V
參數(shù)資料
型號(hào): AD9631ARZ
廠商: Analog Devices Inc
文件頁數(shù): 16/20頁
文件大?。?/td> 0K
描述: IC OPAMP VF ULDIST 70MA 8SOIC
標(biāo)準(zhǔn)包裝: 98
放大器類型: 電壓反饋
電路數(shù): 1
轉(zhuǎn)換速率: 1300 V/µs
-3db帶寬: 320MHz
電流 - 輸入偏壓: 2µA
電壓 - 輸入偏移: 3000µV
電流 - 電源: 17mA
電流 - 輸出 / 通道: 70mA
電壓 - 電源,單路/雙路(±): 6 V ~ 12 V,±3 V ~ 6 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 8-SO
包裝: 管件
產(chǎn)品目錄頁面: 770 (CN2011-ZH PDF)
Data Sheet
AD9631/AD9632
Rev. D | Page 5 of 20
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Rating
Supply Voltage (+VS to VS)
12.6 V
Voltage Swing × Bandwidth Product
550 V × MHz
Internal Power Dissipation
PDIP (N)
1.3 W
SOIC (R)
0.9 W
Input Voltage (Common Mode)
±VS
Differential Input Voltage
±1.2 V
Output Short Circuit Duration
Observe Power
Derating Curves
Storage Temperature Range
65°C to +125°C
Operating Temperature Range (A Grade)
40°C to +85°C
Lead Temperature Range (Soldering 10 sec)
300°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
METALLIZATION PHOTO
Figure 3. Dimensions shown in inches and (millimeters) Connect Substrate to VS
THERMAL RESISTANCE
Table 3.
Package Type1
θJA
Unit
8-Lead PDIP (N)
90
°C/W
8-Lead SOIC (R)
140
°C/W
1 For device in free air.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by these
devices is limited by the associated rise in junction temperature.
The maximum safe junction temperature for plastic encapsu-
lated devices is determined by the glass transition temperature
of the plastic, approximately 150°C. Exceeding this limit tempo-
rarily may cause a shift in parametric performance due to a
change in the stresses exerted on the die by the package.
Exceeding a junction temperature of 175°C for an extended
period can result in device failure.
While the AD9631 and AD9632 are internally short circuit
protected, this may not be sufficient to guarantee that the max-
imum junction temperature (150°C) is not exceeded under all
conditions. To ensure proper operation, it is necessary to
observe the maximum power derating curves.
Figure 4. Maximum Power Dissipation vs. Temperature
ESD CAUTION
AD9631
AD9632
–IN
2
+VS
7
6
OUT
2
+VS
7
6
OUT
3
+IN
4
–VS
3
+IN
4
–VS
0.046
(1.17)
0.050 (1.27)
0.046
(1.17)
0
060
1-
0
03
2.0
0
0.5
1.0
1.5
–50 –40 –30 –20 –10
0
10
20
30
40
50
60
70
80
90
MA
XI
MU
M
PO
W
E
R
D
ISS
IP
A
T
IO
N
(
W
)
AMBIENT TEMPERATURE (°C)
8-LEAD SOIC PACKAGE
8-LEAD PDIP PACKAGE
TJ = 150°C
0060
1-
004
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