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參數(shù)資料
| 型號： | ADA4860-1YRJZ-RL7 |
| 廠商： | Analog Devices Inc |
| 文件頁數(shù)： | 18/21頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC OPAMP CF LP 85MA SOT23-6 |
| 產(chǎn)品培訓(xùn)模塊： | Practical Guide High Speed PCB Layout |
| 標準包裝： | 1 |
| 放大器類型： | 電流反饋 |
| 電路數(shù)： | 1 |
| 轉(zhuǎn)換速率： | 980 V/µs |
| -3db帶寬： | 520MHz |
| 電流 - 輸入偏壓： | 1.5µA |
| 電壓 - 輸入偏移： | 3500µV |
| 電流 - 電源： | 6mA |
| 電流 - 輸出 / 通道： | 85mA |
| 電壓 - 電源，單路/雙路(±)： | 5 V ~ 12 V，±2.5 V ~ 6 V |
| 工作溫度： | -40°C ~ 105°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | SOT-23-6 |
| 供應(yīng)商設(shè)備封裝： | SOT-23-6 |
| 包裝： | 標準包裝 |
| 產(chǎn)品目錄頁面： | 772 (CN2011-ZH PDF) |
| 其它名稱： | ADA4860-1YRJZ-RL7DKR |
ADA4860-1
Rev. 0 | Page 5 of 20
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Rating
Supply Voltage
12.6 V
Power Dissipation
See Figure 3
Common-Mode Input Voltage
VS + 1 V to +VS 1 V
Differential Input Voltage
±VS
Storage Temperature Range
65°C to +125°C
Operating Temperature Range
40°C to +105°C
Lead Temperature
JEDEC J-STD-20
Junction Temperature
150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, θJA is
specified for device soldered in circuit board for surface-mount
packages.
Table 4. Thermal Resistance
Package Type
θJA
Unit
6-lead SOT-23
170
°C/W
Maximum Power Dissipation
The maximum safe power dissipation for the ADA4860-1 is
limited by the associated rise in junction temperature (TJ) on
the die. At approximately 150°C, which is the glass transition
temperature, the plastic changes its properties. Even temporarily
exceeding this temperature limit can change the stresses that the
package exerts on the die, permanently shifting the parametric
performance of the amplifiers. Exceeding a junction temperature of
150°C for an extended period can result in changes in silicon
devices, potentially causing degradation or loss of functionality.
The power dissipated in the package (PD) for a sine wave and a
resistor load is the total power consumed from the supply
minus the load power.
PD = Total Power Consumed Load Power
(
)
L
OUT
CURRENT
SUPPLY
VOLTAGE
SUPPLY
D
R
V
I
V
P
2
–
×
=
RMS output voltages should be considered.
Airflow across the ADA4860-1 helps remove heat from the
package, effectively reducing θJA. In addition, more metal
directly in contact with the package leads and through holes
under the device reduces θJA.
Figure 3 shows the maximum safe power dissipation in the
package vs. the ambient temperature for the 6-lead SOT-23
(170°C/W) on a JEDEC standard 4-layer board. θJA values are
approximations.
2.0
1.5
1.0
0.5
0
–40 –30 –20 –10
0
110
100
90
80
70
60
50
40
30
20
10
MA
XI
MU
M
PO
W
E
R
D
ISSI
PA
T
IO
N
(W
)
AMBIENT TEMPERATURE (°C)
05709-
002
Figure 3. Maximum Power Dissipation vs. Temperature for a 4-Layer Board
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
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