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| 型號(hào)： | ADG636YRUZ-REEL7 |
| 廠商： | Analog Devices Inc |
| 文件頁(yè)數(shù)： | 1/16頁(yè) |
| 文件大?。?/td> | 0K |
| 描述： | IC SWITCH DUAL SPDT 14TSSOP |
| 產(chǎn)品培訓(xùn)模塊： | Switch Fundamentals |
| 標(biāo)準(zhǔn)包裝： | 1,000 |
| 功能： | 開(kāi)關(guān) |
| 電路： | 2 x SPDT - NC/NO |
| 導(dǎo)通狀態(tài)電阻： | 290 歐姆 |
| 電壓電源： | 單/雙電源 |
| 電壓 - 電源，單路/雙路(±)： | 2.7 V ~ 5.5 V，±2.7 V ~ 5.5 V |
| 電流 - 電源： | 1nA |
| 工作溫度： | -40°C ~ 125°C |
| 安裝類(lèi)型： | 表面貼裝 |
| 封裝/外殼： | 14-TSSOP（0.173"，4.40mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 14-TSSOP |
| 包裝： | 帶卷 (TR) |
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1 pC Charge Injection, 100 pA Leakage,
CMOS, ±5 V/+5 V/+3 V Dual SPDT Switch
ADG636
Rev. B
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibilityis assumedbyAnalogDevicesforitsuse,norforanyinfringementsof patentsorother
rightsofthirdpartiesthatmayresultfromitsuse.Specificationssubjecttochangewithoutnotice.No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113
2002–2009 Analog Devices, Inc. All rights reserved.
FEATURES
1 pC charge injection
±2.7 V to ±5.5 V dual supply
+2.7 V to +5.5 V single supply
Automotive temperature range: 40°C to +125°C
100 pA (maximum at 25°C) leakage currents
85 Ω typical on resistance
Rail-to-rail operation
Fast switching times
Typical power consumption (<0.1 μW)
TTL-/CMOS-compatible inputs
14-lead TSSOP package
APPLICATIONS
Automatic test equipment
Data acquisition systems
Battery-powered instruments
Communication systems
Sample-and-hold systems
Remote-powered equipment
Audio and video signal routing
Relay replacement
Avionics
FUNCTIONAL BLOCK DIAGRAM
ADG636
S1A
D1
6
D2
9
S2B
S2A
S1B
A1
14
A0
1
EN
2
4
5
11
10
LOGIC
02
75
4-
0
01
Figure 1.
GENERAL DESCRIPTION
The ADG636 is a monolithic device, comprising two indepen-
dently selectable CMOS single pole, double throw (SPDT)
switches. When on, each switch conducts equally well in both
directions.
The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or
from a single supply of +2.7 V to +5.5 V.
This switch offers ultralow charge injection of ±1.5 pC over the
entire signal range and leakage current of 10 pA typical at 25°C.
In addition, it offers on resistance of 85 Ω typical, which is matched
to within 2 Ω between channels. The ADG636 also has low power
dissipation yet is capable of high switching speeds.
The ADG636 exhibits break-before-make switching action and
is available in a 14-lead TSSOP package.
PRODUCT HIGHLIGHTS
1.
Ultralow charge injection. QINJ: ±1.5 pC typical over the
full signal range.
2.
Leakage current <0.25 nA maximum at 85°C.
3.
Dual ±2.7 V to ±5 V or single +2.7 V to +5.5 V supply.
4.
Automotive temperature range: 40°C to +125°C.
5.
Small 14-lead TSSOP package.
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| ADG636YRUZ-REEL71 | 制造商:AD 制造商全稱(chēng):Analog Devices 功能描述:1 pC Charge Injection, 100 pA Leakage, CMOS, ?±5 V/5 V/3 V Dual SPDT Switch |
| ADG6404BCPZ-REEL7 | 功能描述:1 Circuit IC Switch 4:1 11.5 Ohm 16-LFCSP-WQ (4x4) 制造商:analog devices inc. 系列:- 包裝:管件 零件狀態(tài):有效 開(kāi)關(guān)電路:- 多路復(fù)用器/解復(fù)用器電路:4:1 電路數(shù):1 導(dǎo)通電阻（最大值）:11.5 歐姆 通道至通道匹配（ΔRon）:650 毫歐 電壓 -?電源，單（V+）:8 V ~ 44 V 電壓 - 電源，雙（V±）:±5 V ~ 22 V 開(kāi)關(guān)時(shí)間（Ton, Tof）（最大值）:535ns，205ns -3db 帶寬:110MHz 電荷注入:695pC 溝道電容 （CS(off），CD（off））:11pF，47pF 電流 - 漏泄（IS（off））（最大值）:500pA 串?dāng)_:-73dB @ 1MHz 工作溫度:-40°C ~ 125°C（TA） 封裝/外殼:16-WQFN 裸露焊盤(pán)，CSP 供應(yīng)商器件封裝:16-LFCSP-WQ（4x4） 標(biāo)準(zhǔn)包裝:1,500 |
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| ADG658TRUZ-EP | 功能描述:IC MULTIPLEXER 8:1 MUX 16TSSOP 制造商:analog devices inc. 系列:- 包裝:管件 零件狀態(tài):在售 開(kāi)關(guān)電路:- 多路復(fù)用器/解復(fù)用器電路:8:1 電路數(shù):1 導(dǎo)通電阻（最大值）:75 歐姆 通道至通道匹配（ΔRon）:1.3 歐姆 電壓 -?電源，單（V+）:2 V ~ 12 V 電壓 - 電源，雙（V±）:±2 V ~ 6 V 開(kāi)關(guān)時(shí)間（Ton, Tof）（最大值）:115ns，45ns -3db 帶寬:210MHz 電荷注入:2pC 溝道電容 （CS(off），CD（off））:4pF, 28pF 電流 - 漏泄（IS（off））（最大值）:200pA 串?dāng)_:- 工作溫度:-55°C ~ 125°C（TA） 封裝/外殼:16-TSSOP（0.173"，4.40mm 寬） 供應(yīng)商器件封裝:16-TSSOP 標(biāo)準(zhǔn)包裝:96 |
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