–2–
ADG784–SPECIFICATIONS
B Version
TMIN to
Parameter
25 CTMAX
Unit
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 V to VDD
V
On Resistance (RON)
2.2
Ω typ
VD = 0 V to VDD, IS = –10 mA
5
Ω max
On Resistance Match Between
Channels (
ΔRON)
0.15
Ω typ
VD = 0 V to VDD, IS = –10 mA
0.5
Ω max
On Resistance Flatness (RFLAT(ON))
0.5
Ω typ
VD = 0 V to VDD; IS = –10 mA
1
Ω max
LEAKAGE CURRENTS
Source OFF Leakage IS (OFF)
±0.01
nA typ
VD = 4.5 V, VS = 1 V; VD = 1 V, VS = 4.5 V;
±0.5
±1
nA max
Test Circuit 2
Drain OFF Leakage ID (OFF)
±0.01
nA typ
VD = 4.5 V, VS = 1 V; VD = 1 V, VS = 4.5 V;
±0.5
±1
nA max
Test Circuit 2
Channel ON Leakage ID, IS (ON)
±0.01
nA typ
VD = VS = 4.5 V; VD = VS = 1 V; Test Circuit 3
±0.5
±1
nA max
DIGITAL INPUTS
Input High Voltage, VINH
2.4
V min
Input Low Voltage, VINL
0.8
V max
Input Current
IINL or IINH
0.001
μA typ
VIN = VINL or VINH
±0.5
μA max
DYNAMIC CHARACTERISTICS
2
tON
10
ns typ
RL = 100
Ω, C
L = 35 pF,
20
ns max
VS = 3 V; Test Circuit 4
tOFF
4
ns typ
RL = 100
Ω, CL = 35 pF,
8
ns max
VS = 3 V; Test Circuit 4
Break-Before-Make Time Delay, tD
5
ns typ
RL = 100
Ω, CL = 35 pF,
1
ns min
VS1 = VS2 = 5 V; Test Circuit 5
Off Isolation
–65
dB typ
RL = 100
Ω, f = 10 MHz; Test Circuit 7
Channel-to-Channel Crosstalk
–75
dB typ
RL = 100
Ω, f = 10 MHz; Test Circuit 8
Bandwidth –3 dB
240
MHz typ
RL = 100
Ω; Test Circuit 6
Distortion
0.5
% typ
RL = 100
Ω
Charge Injection
10
pC typ
CL = 1 nF; Test Circuit 9
CS (OFF)
10
pF typ
f = 1 kHz
CD (OFF)
20
pF typ
f = 1 kHz
CD, CS (ON)
30
pF typ
f = 1 MHz
POWER REQUIREMENTS
VDD = 5.5 V
Digital Inputs = 0 V or VDD
IDD
1
μA max
0.001
μA typ
IIN
1
μA typ
VIN = 5 V
IO
100
mA max
VS/VD = 0 V
NOTES
1Temperature ranges are as follows: B Version, –40
°C to +85°C.
2Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(VDD = 5 V
10%, GND = 0 V. All specifications TMIN to TMAX unless otherwise noted.)
SINGLE SUPPLY
REV. A