參數(shù)資料
型號(hào): ADG802
廠商: Analog Devices, Inc.
英文描述: <0.5 ohm CMOS, Low Voltage, SPST Switches
中文描述: “0.5歐姆的CMOS,低電壓,SPST開關(guān)
文件頁(yè)數(shù): 4/9頁(yè)
文件大?。?/td> 76K
代理商: ADG802
ADG801/ADG802
A BSOL UT E MA X IMUM R A T INGS
1
(T
A
= +25
°
C unless otherwise noted)
V
DD
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.3 V to +7 V
Analog Inputs
2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
- 0.3 V to V
DD
+0.3 V
. . . . . . . . . . . . . . . . . . . . or 30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . 400 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . 800 mA
(Pulsed at 1 ms, 10% Duty Cycle Max)
Operating T emperature Range
E xtended . . . . . . . . . . . . . . . . . . . . . . .
40
°
C to +125
°
C
Storage T emperature Range . . . . . . . . .
65
°
C to +150
°
C
Junction T emperature . . . . . . . . . . . . . . . . . . . . . . . .+150
°
C
μSOIC Package, Power Dissipation . . . . . . . . . . . 315 mW
θ
JA
T hermal Impedance . . . . . . . . . . . . . . . . . . 206
°
C /W
θ
JC
T hermal Impedance . . . . . . . . . . . . . . . . . . . 44
°
C /W
SOT -23 Package, Power Dissipation . . . . . . . . . . 282 mW
θ
JA
T hermal Impedance . . . . . . . . . . . . . . . . . 229.6
°
C /W
θ
JC
T hermal Impedance . . . . . . . . . . . . . . . . . 91.99
°
C /W
L ead T emperature, Soldering (10seconds) . . . . . . . 300
°
C
IR Reflow, Peak T emperature . . . . . . . . . . . . . . . . .+220
°
C
E SD .....................................................................2kV
–4–
REV. PrE
PRELIMINARY TECHNICAL DATA
C AUT ION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the ADG801/ADG802 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. T herefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNNG
ESD SENSITIVE DEVICE
ORDE RING GUIDE
Model
T emperature Range
Supply Option
1
Brand
1
Package Descriptions
Package Options
AD G 801BR T
AD G 801BR M
AD G 802BR T
AD G 802BR M
40
°
C to +125
°
C
40
°
C to +125
°
C
40
°
C to +125
°
C
40
°
C to +125
°
C
3 V, 5 V
3 V, 5 V
3 V, 5 V
3 V, 5 V
SL B
SL B
SM B
SM B
SOT -23 (Plastic Surface Mount) R T -6
μSOIC (Small Outline)
SOT -23 (Plastic Surface Mount) R T -6
μSOIC (Small Outline)
RM -8
RM -8
1
Branding on SOT -23 and
μ
SOIC packages is limited to 3 characters due to space constraints.
N O T E S
1
Stresses above those listed under Absolute M aximum Ratings may
cause permanent damage to the device. T his is a stress rating only;
functional operation of the device at these or any other conditions above
those listed in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods
may affect device reliability. Only one absolute maximum rating may
be applied at any one time.
2
Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
T able I. T ruth T able
ADG801 In
ADG802 In
Switch Condition
0
1
1
0
OFF
ON
PIN C ONFIGURAT IONS
6-Lead Plastic Surface Mount (SOT -23)
(RT -6)
TOP VIEW
(Not to Scale)
6
5
4
1
2
3
NC = NO CONNECT
D
S
GND
V
DD
NC
IN
ADG801/
ADG802
8-Lead Small Outline
μ
SOIC
(RM-8)
TOP VIEW
(Not to Scale)
8
7
6
5
1
2
3
4
NC = NO CONNECT
D
NC
NC
S
GND
IN
NC
V
DD
ADG801/
ADG802
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