ADG854
Rev. 0 | Page 4 of 16
VDD = 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted.
Table 2.
Parameter
+25°C
40°C to +85°C
Unit
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 to VDD
V
On Resistance, RON
1.3
Ω typ
VDD = 2.7 V, VS = 0 V to VDD, IDS = 100 mA; see Figure 16 1.5
1.7
Ω max
On Resistance Match Between Channels, RON
0.03
Ω typ
VDD = 2.7 V, VS = 0.6 V, IDS = 100 mA
0.05
Ω max
On Resistance Flatness, RFLAT (ON)
0.48
Ω typ
VDD = 2.7 V, VS = 0 V to VDD, IDS = 100 mA
0.66
Ω max
LEAKAGE CURRENTS
VDD = 3.6 V
Source Off Leakage, IS (Off )
±10
pA typ
VS = 0.6 V/3.3 V, VD = 3.3 V/0.6 V; see Figure 17 Channel On Leakage, ID, IS (On)
±30
pA typ
DIGITAL INPUTS
Input High Voltage, VINH
1.35
V min
Input Low Voltage, VINL
0.7
V max
Input Current
IINL or IINH
0.002
μA typ
VIN = VGND or VDD
0.05
μA max
Digital Input Capacitance, CIN
4
pF typ
tON
25
ns typ
RL = 50 Ω, CL = 35 pF
37
43
ns max
tOFF
7
ns typ
RL = 50 Ω, CL = 35 pF
7.4
8
ns max
Break-Before-Make Time Delay, tBBM
22
ns typ
RL = 50 Ω, CL = 35 pF
13
ns min
Charge Injection
23
pC typ
VS = 1.5 V, RS = 0 V, CL = 1 nF; see Figure 21 Off Isolation
75
dB typ
RL = 50 Ω, CL = 5 pF, f = 100 kHz; see Figure 22 Channel-to-Channel Crosstalk
85
dB typ
S1A to S2A/S1B to S2B; RL = 50 Ω, CL = 5 pF,
73
dB typ
S1A to S1B/S2A to S2B; RL = 50 Ω, CL = 5 pF,
Total Harmonic Distortion, THD
0.15
% typ
RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 1.5 V p-p
Insertion Loss
0.07
dB typ
–3 dB Bandwidth
100
MHz typ
CS (Off )
20
pF typ
CD, CS (On)
52
pF typ
POWER REQUIREMENTS
VDD = 3.6 V
IDD
0.002
μA typ
Digital inputs = 0 V or 3.6 V
1.0
μA max
1 Guaranteed by design, not subject to production test.