the absolute value of VBE, varies from device to" />
參數(shù)資料
型號(hào): ADM1025ARQZ-R7
廠商: ON Semiconductor
文件頁數(shù): 3/19頁
文件大?。?/td> 0K
描述: IC MONITOR SYS/VOLT 5CH 16QSOP
產(chǎn)品變化通告: MFG CHG Notification ADI to ON Semi
Product Obsolescence 11/Feb/2009
標(biāo)準(zhǔn)包裝: 1,000
應(yīng)用: PC,PDA
接口: I²C
電源電壓: 3 V ~ 5.5 V
封裝/外殼: 16-SSOP(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 16-QSOP
包裝: 帶卷 (TR)
安裝類型: 表面貼裝
ADM1025, ADM1025A
http://onsemi.com
11
the absolute value of VBE, varies from device to device, and
individual calibration is required to null this out, so the
technique is unsuitable for mass production.
The technique used in the ADM1025/ADM1025A is to
measure the change in VBE when the device is operated at
two different currents.
This is given by:
(eq. 1)
DVBE + KT q
ln(N)
where:
K is Boltzmann’s constant
q is charge on the carrier
T is absolute temperature in Kelvins
N is ratio of the two currents
Figure 14 shows the input signal conditioning used to
measure the output of an external temperature sensor. This
figure shows the external sensor as a substrate transistor
provided
for
temperature
monitoring
on
some
microprocessors, but it could equally well be a discrete
transistor.
If a discrete transistor is used, the collector will not be
grounded and should be linked to the base. If a PNP
transistor is used, the base is connected to the D input and
the emitter to the D+ input. If an NPN transistor is used, the
emitter is connected to the D input and the base to the D+
input.
Bit 6 of Status Register 2 (42h) is set if a remote diode
fault is detected. The ADM1025/ADM1025A detects shorts
from D+ to GND or supply, as well as shorts/opens between
D+/D.
Table 7. TEMPERATURE DATA FORMAT
Temperature
Digital Output
128C
1000 0000
125C
1000 0011
100C
1001 1100
75C
1011 0101
50C
1100 1110
25C
1110 0111
0C
0000 0000
+10C
0000 1010
+25C
0001 1001
+50C
0011 0010
+75C
0100 1011
+100C
0110 0100
+125C
0111 1101
+127C
0111 1111
Figure 14. Signal Conditioning for External Diode Temperature Sensors
LOW-PASS FILTER
fC = 65 kHz
REMOTE
SENSING
TRANSISTOR
BIAS
DIODE
D+
D
VDD
IBIAS
IN I
VOUT+
VOUT
To ADC
To prevent ground noise interfering with the
measurement, the more negative terminal of the sensor is not
referenced to ground but is biased above ground by an
internal diode at the D input.
If the sensor is used in a very noisy environment, a
capacitor of value up to 1 nF may be placed between the D+
and D– inputs to filter the noise.
To measure
DVBE, the sensor is switched between
operating currents of I and N I. The resulting waveform is
passed through a 65 kHz low-pass filter to remove noise,
then to a chopperstabilized amplifier that performs the
functions of amplification and rectification of the waveform
to produce a dc voltage proportional to
DVBE. This voltage
is measured by the ADC to give a temperature output in 8-bit
twos complement format. To further reduce the effects of
noise, digital filtering is performed by averaging the results
of 16 measurement cycles. An external temperature
measurement takes nominally 34.8 ms.
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