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| 型號(hào)： | ADM207EANZ |
| 廠商： | Analog Devices Inc |
| 文件頁(yè)數(shù)： | 4/20頁(yè) |
| 文件大?。?/td> | 0K |
| 描述： | IC TXRX RS232 5DVR/3REC 24DIP |
| 標(biāo)準(zhǔn)包裝： | 15 |
| 類(lèi)型： | 收發(fā)器 |
| 驅(qū)動(dòng)器/接收器數(shù)： | 5/3 |
| 規(guī)程： | RS232 |
| 電源電壓： | 4.5 V ~ 5.5 V |
| 安裝類(lèi)型： | 通孔 |
| 封裝/外殼： | 24-DIP（0.300"，7.62mm） |
| 供應(yīng)商設(shè)備封裝： | 24-PDIP |
| 包裝： | 管件 |
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ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
Rev. E | Page 12 of 20
destruction can occur immediately because of arcing or heating.
Even if catastrophic failure does not occur immediately, the
device can suffer from parametric degradation that can result in
degraded performance. The cumulative effects of continuous
exposure can eventually lead to complete failure.
I/O lines are particularly vulnerable to ESD damage. Simply
touching or plugging in an I/O cable can result in a static
discharge that can damage or destroy the interface product
connected to the I/O port. Traditional ESD test methods, such
as the MIL-STD-883B method 3015.7, do not fully test product
susceptibility to this type of discharge. This test was intended to
test product susceptibility to ESD damage during handling.
Each pin is tested with respect to all other pins.
There are some important differences between the traditional
test and the IEC test:
The IEC test is much more stringent in terms of discharge
energy. The peak current injected is over four times greater.
The current rise time is significantly faster in the IEC test.
The IEC test is carried out while power is applied to
the device.
It is possible that the ESD discharge could induce latch-up in
the device being tested. This test, therefore, is more represent-
tative of a real-world I/O discharge, where the equipment is
operating normally with power applied. However, both tests
should be performed to ensure maximum protection both
during handling and later during field service.
R1
R2
C1
ESD TEST METHOD
R2
C1
H. BODY MIL-STD-883B
1.5k
100pF
IEC 1000-4-2
330
150pF
HIGH
VOLTAGE
GENERATOR
DEVICE
UNDER TEST
0
006
8-
02
6
Figure 26. ESD Test Standards
100
I PEAK
(%
)
90
36.8
10
tDL
tRL
TIME t
00
06
8-
0
27
Figure 27. Human Body Model ESD Current Waveform
100
I PEA
K
(%
)
90
10
0.1ns TO 1ns
60ns
30ns
TIME t
00
06
8-
02
8
Figure 28. IEC 1000-4-2 ESD Current Waveform
ADM2xxE products are tested using both of the previously
mentioned test methods. Pins are tested with respect to all other
pins as per the MIL-STD-883B specification. In addition, all I/O
pins are tested per the IEC test specification. The products are
tested under the following conditions:
Power on (normal operation).
Power on (shutdown mode).
Power off.
There are four levels of compliance defined by IEC 1000-4-2.
ADM2xxE products meet the most stringent compliance level
both for contact and for air-gap discharge. This means that the
products are able to withstand contact discharges in excess of
8 kV and air-gap discharges in excess of 15 kV.
Table 7. IEC 1000-4-2 Compliance Levels
Level
Contact Discharge (kV)
Air-Gap Discharge (kV)
1
2
4
3
6
8
4
8
15
Table 8. ADM2xxE ESD Test Results
ESD Test Method
I/O Pin (kV)
MIL-STD-883B
±15
IEC 1000-4-2
Contact
±8
Air-Gap
±15
EFT/BURST TESTING (IEC 1000-4-4)
IEC 1000-4-4 (previously IEC 801-4) covers EFT/burst
immunity. Electrical fast transients occur because of arcing
contacts in switches and relays. The tests simulate the
interference generated when, for example, a power relay
disconnects an inductive load. A spark is generated due to the
well-known back EMF effect. In fact, the spark consists of a
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