參數(shù)資料
型號(hào): ADM2209EARUZ-REEL
廠商: Analog Devices Inc
文件頁(yè)數(shù): 2/12頁(yè)
文件大小: 0K
描述: IC TXRX 6/10 RS-232 DUAL 38TSSOP
標(biāo)準(zhǔn)包裝: 2,500
類型: 收發(fā)器
驅(qū)動(dòng)器/接收器數(shù): 6/10
規(guī)程: RS232
電源電壓: 10.8 V ~ 13.2 V
安裝類型: 表面貼裝
封裝/外殼: 38-TFSOP(0.173",4.40mm 寬)
供應(yīng)商設(shè)備封裝: 38-TSSOP
包裝: 帶卷 (TR)
REV. 0
ADM2209E
–10–
The ADM2209E is tested using both of the above-mentioned
test methods. All pins are tested with respect to all other pins as
per the MIL-STD-883B specification. In addition, all I-O pins
are tested as per the IEC test specification. The products were
tested under the following conditions:
(a) Power-On—Normal Operation
(b) Power-Off
There are four levels of compliance defined by IEC1000-4-2.
The ADM2209E meets the most stringent compliance level for
both contact and air-gap discharge. This means that the products
are able to withstand contact discharges in excess of 8 kV and air-
gap discharges in excess of 15 kV.
Table IV. IEC1000-4-2 Compliance Levels
Contact Discharge
Air Discharge
Level
kV
12
2
24
4
36
8
48
15
Table V. ADM2209E ESD Test Results
ESD Test Method
I-O Pins
Other Pins
MIL-STD-883B
±15 kV
±2.5 kV
IEC1000-4-2
Contact
±8 kV
Air
±15 kV
FAST TRANSIENT BURST TESTING (IEC1000-4-4)
IEC1000-4-4 (previously 801-4) covers electrical fast-transient/
burst (EFT) immunity. Electrical fast transients occur as a
result of arcing contacts in switches and relays. The tests simu-
late the interference generated when, for example, a power relay
disconnects an inductive load. A spark is generated due to the
well-known back EMF effect. In fact the spark consists of a burst
of sparks as the relay contacts separate. The voltage appearing
on the line, therefore, consists of a burst of extremely fast tran-
sient impulses. A similar effect occurs when switching on fluo-
rescent lights.
The fast transient burst test defined in IEC1000-4-4 simulates
this arcing and its waveform is illustrated in Figure 26. It con-
sists of a burst of 2.5 kHz to 5 kHz transients repeating at
300 ms intervals. It is specified for both power and data lines.
300ms
15ms
t
V
5ns
0.2/0.4ms
50ns
V
t
Figure 26. IEC1000-4-4 Fast Transient Waveform
Table VI.
V Peak (kV)
Level
PSU
I-O
1
0.5
0.25
2
1
0.5
32
1
44
2
A simplified circuit diagram of the actual EFT generator is
illustrated in Figure 27.
RC
RM
CC
HIGH
VOLTAGE
SOURCE
L
ZS
CD
50
OUTPUT
Figure 27. IEC1000-4-4 Fast Transient Generator
The transients are coupled onto the signal lines using an EFT
coupling clamp. The clamp is 1 meter long and it completely
surrounds the cable, providing maximum coupling capacitance
(50 pF to 200 pF typ) between the clamp and the cable. High
energy transients are capacitively coupled onto the signal lines.
Fast rise times (5 ns) as specified by the standard result in very
effective coupling. This test is very severe since high voltages
are coupled onto the signal lines. The repetitive transients can
often cause problems where single pulses do not. Destructive
latch-up may be induced due to the high energy content of the
transients. Note that this stress is applied while the interface
products are powered up and transmitting data. The EFT test
applies hundreds of pulses with higher energy than ESD. Worst
case transient current on an I-O line can be as high as 40 A.
Test results are classified according to the following:
1. Normal performance within specification limits.
2. Temporary degradation or loss of performance which is self-
recoverable.
3. Temporary degradation or loss of function or performance
which requires operator intervention or system reset.
4. Degradation or loss of function which is not recoverable due
to damage.
The ADM2209E has been tested under worst case conditions
using unshielded cables and meets Classification 2. Data trans-
mission during the transient condition is corrupted, but it may
be resumed immediately following the EFT event without user
intervention.
IEC1000-4-3 RADIATED IMMUNITY
IEC1000-4-3 (previously IEC801-3) describes the measure-
ment method and defines the levels of immunity to radiated
electromagnetic fields. It was originally intended to simulate the
electromagnetic fields generated by portable radio transceivers
or any other device that generates continuous wave radiated
electromagnetic energy. Its scope has since been broadened to
include spurious EM energy which can be radiated from fluores-
cent lights, thyristor drives, inductive loads, etc.
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