參數(shù)資料
型號: ADM3101EARQZ-REEL
廠商: Analog Devices Inc
文件頁數(shù): 11/12頁
文件大?。?/td> 0K
描述: IC TXRX RS-232 3.3V 15KV 16QSOP
標準包裝: 2,500
類型: 收發(fā)器
驅動器/接收器數(shù): 1/1
規(guī)程: RS232
電源電壓: 3 V ~ 5.5 V
安裝類型: 表面貼裝
封裝/外殼: 16-SSOP(0.154",3.90mm 寬)
供應商設備封裝: 16-QSOP
包裝: 帶卷 (TR)
ADM3101E
Rev. C | Page 8 of 12
THEORY OF OPERATION
The ADM3101E is a single-channel RS-232 line driver/receiver.
Step-up voltage converters, coupled with level shifting trans-
mitters and receivers, allow RS-232 levels to be developed while
operating from a single 3.3 V supply.
CMOS technology is used to keep the power dissipation to
an absolute minimum, allowing maximum battery life in
portable applications.
CIRCUIT DESCRIPTION
The internal circuitry consists of the following main sections:
A charge pump voltage converter
A 3.3 V logic to an EIA/TIA-232E transmitter
An EIA/TIA-232E to a 3.3 V logic receiver
ADM3101E
GND
+3.3V INPUT
+
C1
0.1F
16V
C2
0.1F
16V
+
T
R
+3.3V TO +6.6V
VOLTAGE DOUBLER
+6.6V TO –6.6V
VOLTAGE INVERTER
C1+
C1–
C2+
C2–
TIN
ROUT
CMOS
INPUT
CMOS
OUTPUT
RIN
VCC
V+
V–
TOUT
C5
0.1F
C3
0.1F
6.3V
C4
0.1F
16V
EIA/TIA-232E
OUTPUT
EIA/TIA-232E
INPUT*
*INTERNAL 5k PULL-DOWN
RESISTOR ON THE RS-232 INPUT.
0
67
66
-01
1
Figure 12. Typical Operating Circuit
Charge Pump Voltage Converter
The charge pump voltage converter consists of a 200 kHz oscil-
lator and a switching matrix. The converter generates a ±6.6 V
supply (when unloaded) from the 3.3 V input level. This is achieved
in two stages by using a switched capacitor technique, as illustrated
in Figure 13 and Figure 14. First, the 3.3 V input supply is doubled
to +6.6 V by using C1 as the charge storage element. The +6.6 V
level is then inverted to generate 6.6 V using C2 as the storage
element. C3 is shown connected between V+ and VCC but is
equally effective if connected between V+ and GND.
The C3 and C4 capacitors are used to reduce the output ripple.
The values are not critical and can be increased, if desired. Larger
capacitors (up to 10 μF) can also be used in place of the C1, C2,
C3, and C4 capacitors.
GND
C3
C1
S1
S2
S3
S4
V+ = 2VCC
+
INTERNAL
OSCILLATOR
VCC
06
76
6-
0
12
Figure 13. Charge Pump Voltage Doubler
GND
C4
C2
S1
S2
S3
S4
GND
+
INTERNAL
OSCILLATOR
V+
V– = –(V+)
FROM
VOLTAGE
DOUBLER
06
76
6-
0
13
Figure 14. Charge Pump Voltage Inverter
3.3 V Logic to EIA/TIA-232E Transmitter
The transmitter driver converts the 3.3 V logic input levels
into RS-232 output levels. When driving an RS-232 load with
VCC = 3.3 V, the output voltage swing is typically ±6 V. Internally,
the TIN pin has a weak pull-up that allows it to be driven by an
open-drain output, but the maximum operating data rate is
reduced when the TIN pin is driven by an open-drain pin.
EIA/TIA-232E to 3.3 V Logic Receiver
The receiver is an inverting level shifter that accepts the RS-232
input level and translates it into a 3.3 V logic output level. The
input has an internal 5 kΩ pull-down resistor to ground and is
protected against overvoltages of up to ±30 V. An unconnected
input is pulled to 0 V by the internal 5 kΩ pull-down resistor,
which, therefore, results in a Logic 1 output level for an uncon-
nected input or for an input connected to GND.
The receiver has a Schmitt trigger input with a hysteresis level
of 0.4 V, which ensures error-free reception for both a noisy
input and for an input with slow transition times.
CMOS Input Voltage Thresholds
The CMOS input and output pins (TIN and ROUT) of the
ADM3101E are designed to interface with 1.8 V logic
thresholds when VCC = 3.3 V.
The CMOS input and output pins (TIN and ROUT) of the
ADM3101E are also designed to interface with TTL/CMOS
logic thresholds when VCC = 5 V.
ESD Protection on RS-232 and CMOS I/O Pins
All RS-232 (TOUT and RIN) and CMOS (TIN and ROUT) inputs
and outputs are protected against electrostatic discharges (up
to ±15 kV).
HIGH BAUD RATE
The ADM3101E features high slew rates, permitting data trans-
mission at rates well in excess of the EIA/RS-232 specifications.
The RS-232 voltage levels are maintained at data rates of up to
460 kbps, even under worst-case loading conditions, when TIN is
driven by a push-pull output. The slew rate is internally controlled
to less than 30 V/μs to minimize EMI interference.
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