ADM483E
Rev. A | Page 3 of 16
SPECIFICATIONS
VCC = 5 V ± 10%. All specifications TMIN to TMAX, unless otherwise noted.
Table 1.
Parameter
Min
Typ
Max
Unit
Test Conditions/Comments
DRIVER
Differential Output Voltage, VOD
5.0
V
2.0
5.0
V
1.5
5.0
V
1.5
5.0
V
VIN = –7 V to +12 V
Δ|VOD| for Complementary Output States
0.2
V
Common-Mode Output Voltage, VOC
3
V
Δ|VOC| for Complementary Output States
0.2
V
R = 27 Ω or 50 Ω
Output Short-Circuit Current (VOUT = High)
250
mA
–7 V ≤ VO ≤ +12 V
Output Short-Circuit Current (VOUT = Low)
250
mA
–7 V ≤ VO ≤ +12 V
CMOS Input Logic Threshold Low, VINL
1.4
0.8
V
CMOS Input Logic Threshold High, VINH
2.0
1.4
V
Logic Input Current (DE, DI)
±1.0
μA
RECEIVER
Differential Input Threshold Voltage, VTH
0.2
+0.2
V
7 V ≤ VCM ≤ +12 V
Input Voltage Hysteresis, ΔVTH
70
mV
VCM = 0 V
Input Resistance
12
kΩ
7 V ≤ VCM ≤ +12 V
Input Current (A, B)
1
mA
VIN = 12 V
0.8
mA
VIN = –7 V
Logic Enable Input Current (RE)
±1
μA
CMOS Output Voltage Low, VOL
0.4
V
IOUT = 4.0 mA
CMOS Output Voltage High, VOH
4.0
V
IOUT = 4.0 mA
Short-Circuit Output Current
7
85
mA
VOUT = GND or VCC
Three-State Output Leakage Current
±2.0
μA
0.4 V ≤ VOUT ≤ 2.4 V
POWER SUPPLY CURRENT
Outputs unloaded, receivers enabled
ICC
36
120
μA
DE = 0 V (disabled), RE = 0 V
270
360
μA
DE = 5 V (enabled), RE = 0 V
Supply Current in Shutdown
0.1
10
μA
DE = 0 V, RE = VCC
ESD IMMUNITY
ESD Protection
±15
kV
HBM air discharge; Pin A, Pin B