參數(shù)資料
型號(hào): ADM690SQ
廠商: ANALOG DEVICES INC
元件分類: 電源管理
英文描述: Microprocessor Supervisory Circuits
中文描述: 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, CDIP8
封裝: CERDIP-8
文件頁數(shù): 5/16頁
文件大?。?/td> 199K
代理商: ADM690SQ
ADM690–ADM695
REV. A
–5–
PIN CONFIGURAT IONS
PRODUCT SE LE CT ION GUIDE
Part
Number
Nominal Reset
T ime
Nominal V
CC
Reset T hreshold
Nominal Watchdog
T imeout Period
Battery Backup
Switching
Base Drive
E xt PNP
Chip E nable
Signals
ADM690
ADM691
ADM692
ADM693
ADM694
ADM695
50 ms
50 ms or ADJ
50 ms
50 ms or ADJ
200 ms
200 ms or ADJ
4.65 V
4.65 V
4.4 V
4.4 V
4.65 V
4.65 V
1.6 s
100 ms, 1.6 s, ADJ
1.6 s
100 ms, 1.6 s, ADJ
1.6 s
100 ms, 1.6 s, ADJ
Yes
Yes
Yes
Yes
Yes
Yes
No
Yes
No
Yes
No
Yes
No
Yes
No
Yes
No
Yes
CIRCUIT INFORMAT ION
Battery Switchover Section
T he battery switchover circuit compares V
CC
to the V
BAT T
input, and connects V
OUT
to whichever is higher. Switchover
occurs when V
CC
is 50 mV higher than V
BAT T
as V
CC
falls, and
when V
CC
is 70 mV greater than V
BAT T
as V
CC
rises. T his
20 mV of hysteresis prevents repeated rapid switching if V
CC
falls very slowly or remains nearly equal to the battery voltage.
Figure 1. Battery Switchover Schematic
During normal operation with V
CC
higher than V
BAT T
, V
CC
is in-
ternally switched to V
OUT
via an internal PMOS transistor
switch. T his switch has a typical on-resistance of 1.5
and can
supply up to 100 mA at the V
OUT
terminal. V
OUT
is normally
used to drive a RAM memory bank which may require instanta-
neous currents of greater than 100 mA. If this is the case then a
bypass capacitor should be connected to V
OUT
. T he capacitor
will provide the peak current transients to the RAM. A capaci-
tance value of 0.1
μ
F or greater may be used.
If the continuous output current requirement at V
OUT
exceeds
100 mA or if a lower V
CC
–V
OUT
voltage differential is desired,
an external PNP pass transistor may be connected in parallel
with the internal transistor. T he BAT T ON output (ADM691/
ADM693/ADM695) can directly drive the base of the external
transistor.
A 20
MOSFET switch connects the V
BAT T
input to V
OUT
during battery backup. T his MOSFET has very low input-to-
output differential (dropout voltage) at the low current levels
required for battery back up of CMOS RAM or other low
power CMOS circuitry. T he supply current in battery back up
is typically 0.6
μ
A.
T he ADM690/ADM691/ADM694/ADM695 operates with
battery voltages from 2.0 V to 4.25 V and the ADM692/ADM693
operates with battery voltages from 2.0 V to 4.0 V. High value
capacitors, either standard electrolytic or the farad size double
layer capacitors, can also be used for short-term memory back
up. A small charging current of typically 10 nA (0.1
μ
A max)
flows out of the V
BAT T
terminal. T his current is useful for
maintaining rechargeable batteries in a fully charged condition.
T his extends the life of the back up battery by compensating
for its self discharge current. Also note that this current poses
no problem when lithium batteries are used for back up since
the maximum charging current (0.1
μ
A) is safe for even the
smallest lithium cells.
If the battery-switchover section is not used, V
BAT T
should be
connected to GND and V
OUT
should be connected to V
CC
.
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
TOP VIEW
(Not to Scale)
ADM691
ADM693
ADM695
GND
V
BATT
V
OUT
PFI
PFO
WDO
V
CC
RESET
BATT ON
LOW LINE
OSC IN
OSC SEL
RESET
CE
IN
CE
OUT
WDI
GND
V
BATT
V
OUT
PFI
PFO
WDI
RESET
V
CC
1
2
3
4
8
7
6
5
TOP VIEW
(Not to Scale)
ADM690
ADM692
ADM694
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