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參數(shù)資料
| 型號(hào)： | ADP3408ARU-25 |
| 廠商： | Analog Devices, Inc. |
| 英文描述： | GSM Power Management System |
| 中文描述： | 手機(jī)電源管理系統(tǒng) |
| 文件頁數(shù)： | 4/16頁 |
| 文件大小： | 206K |
| 代理商： | ADP3408ARU-25 |
ADP3408
REV. 0
–4–
Parameter
Symbol
Condition
Min
Typ
Max
Unit
BATTERY CHARGER
Charger Output Voltage
BATSNS
4.35 V
≤
CHRIN
≤
10 V
3
CHGEN = Low, No Load
CHRIN = 5 V
0
≤
CHRIN – ISENSE
< Current Limit Threshold
CHGEN = Low
4.150
4.200
4.250
V
Load Regulation
BATSNS
15
mV
CHRDET On Threshold
CHRDET Off Threshold
CHRDET Off Delay
4
CHRIN Supply Current
CHRIN – BATSNS
CHRIN – BATSNS
30
15
90
45
6
0.6
150
100
mV
mV
ms/nF
mA
CHRIN < VBAT
CHRIN = 5 V
BATTERY CHARGER
Current Limit Threshold
High Current Limit
(UVLO Not Active)
CHRIN – ISENSE
CHRIN = 5 V dc
VBAT = 3.6 V
CHGEN = Low
VBAT = 2 V
CHGEN = Low
CHRIN = 5 V
142
160
190
mV
Low Current Limit
(UVLO Active)
20
35
mV
ISENSE Bias Current
200
μ
A
End-of-Charge Signal Threshold
CHRIN – ISENSE
CHRIN = 5 V
VBAT > 4.0 V
CHGEN = Low
14
35
mV
EOC Reset Threshold
VBAT
CHGEN = Low
3.82
3.96
4.10
V
GATEDR Transition Time
t
R
, t
F
CHRIN = 5 V
VBAT > 3.6 V
CHGEN = High, C
L
= 2 nF
0.1
1
μ
s
GATEDR High Voltage
V
OH
CHRIN = 5 V
VBAT = 3.6 V
CHGEN = High,
GATEIN = High
I
= –1 mA
CHRIN = 5 V
VBAT = 3.6 V
CHGEN = High
GATEIN = Low
I
OL
= 1 mA
I
OH
= –250
μ
A
4.5
V
GATEDR Low Voltage
V
OL
0.5
V
Output High Voltage
(EOC, CHRDET)
Output Low Voltage
(EOC, CHRDET)
Battery Overvoltage
Protection Threshold
(GATEDR
→
High)
Battery Overvoltage
Protection Hysteresis
V
OH
2.4
V
V
OL
I
OL
= +250
μ
A
0.25
V
BATSNS
CHRIN = 7.5 V
CHGEN = High
GATEIN = Low
CHRIN = 7.5 V
CHGEN = High
GATEIN = Low
5.30
5.50
5.70
V
BATSNS
200
mV
NOTES
1
All limits at temperature extremes are guaranteed via correlation using standard Statistical Quality Control (SQC) methods.
2
This feature is intended to protect against catastophic failure of the device. Maximum allowed operating junction temperature is 125oC. Operation beyond
125oC could cause permanent damage to the device.
3
No isolation diode present between charger input and battery.
4
Delay set by external capacitor on the RESCAP pin.
Specifications subject to change without notice.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ADP3408 | Replaced by BQ29415 : Voltage Protection for 2, 3, or 4 Cell LiIon Batteries (2nd Lev Protection) 8-SM8 -25 to 85 |
| ADP3408ARU-18 | GSM Power Management System |
| ADP3410KRU | Dual MOSFET Driver with Bootstrapping |
| ADP3410 | Dual MOSFET Driver with Bootstrapping |
| ADP3412 | Replaced by BQ29415 : Voltage Protection for 2, 3, or 4 Cell LiIon Batteries (2nd Lev Protection) 8-SM8 -25 to 85 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ADP3408ARUZ-1.8RL7 | 制造商:Analog Devices 功能描述: |
| ADP3410 | 制造商:AD 制造商全稱:Analog Devices 功能描述:Dual MOSFET Driver with Bootstrapping |
| ADP34100002RUR | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| ADP34100003RUR | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| ADP3410KRU | 制造商:Analog Devices 功能描述:Single MOSFET DRIVER, 14 Pin, Plastic, TSSOP |
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