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參數(shù)資料
| 型號(hào)： | ADP3419JRMZ-REEL1 |
| 廠商： | Analog Devices, Inc. |
| 英文描述： | Dual Bootstrapped, High Voltage MOSFET Driver with Output Disable |
| 中文描述： | 雙自舉，高電壓MOSFET的輸出驅(qū)動(dòng)器禁用 |
| 文件頁(yè)數(shù)： | 3/16頁(yè) |
| 文件大小： | 317K |
| 代理商： | ADP3419JRMZ-REEL1 |
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ADP3419
SPECIFICATIONS
VCC = SD = 5 V, BST = 4 V to 26 V, T
A
= 0°C to 100°C, unless otherwise noted.
Rev. A | Page 3 of 16
All limits at temperature extremes are guaranteed via correlation using standard statistical quality control (SQC) methods.
Table 1.
Parameter
Symbol
Conditions
LOGIC INPUTS (IN, SD, DRVLSD, CROWBAR)
Input Voltage High
V
IH
Input Voltage Low
V
IL
Input Current
I
IN
Inputs = 0 V or 5 V
DRVLSD Propagation Delay Time
t
pdlDRVLSD
,
t
pdhDRVLSD
HIGH-SIDE DRIVER
Output Resistance, Sourcing Current
BST SW = 4.6 V
Output Resistance, Sinking Current
BST SW = 4.6 V
Transition Times
t
rDRVH
BST SW = 4.6 V, C
LOAD
= 3 nF, Figure 4
t
fDRVH
BST SW = 4.6 V, C
LOAD
= 3 nF, Figure 4
Propagation Delay Times
1
t
pdhDRVH
BST SW = 4.6 V, C
LOAD
= 3 nF, Figure 4
t
pdlDRVH
BST SW = 4.6 V, C
LOAD
= 3 nF, Figure 4
LOW-SIDE DRIVER
Output Resistance, Sourcing Current
Output Resistance, Sinking Current
Transition Times
t
rDRVL
C
LOAD
= 3 nF, Figure 4
t
fDRVL
C
LOAD
= 3 nF, Figure 4
Propagation Delay Times
1, 2
t
pdhDRVL
C
LOAD
= 3 nF, Figure 4
t
pdlDRVL
C
LOAD
= 3 nF, Figure 4
SW Transition Timeout
2
t
SWTO
BST SW = 4.6 V
Zero-Crossing Threshold
V
ZC
SUPPLY
Supply Voltage Range
V
CC
Supply Current
Normal Mode
I
SYS(NM)
I
CC
+ I
BST
, IN = 0 V or 5 V
Shutdown Mode
I
SYS(SD)
I
CC
+ I
BST
, SD = 0 V
Undervoltage Lockout Threshold
VCC rising
Undervoltage Lockout Hysteresis
3
VCC falling
Min
2.0
1
Typ
20
Max
0.8
+1
Unit
V
V
μA
ns
C
LOAD
= 3 nF, Figure 3
15
150
4.6
3.8
50
1.7
0.8
14
11
32
28
1.7
0.8
13
11
25
16
350
1
0.8
325
4.25
120
3.3
2.3
35
25
70
60
3.3
2.3
30
25
48
30
600
6
1.5
600
4.5
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
V
mA
μA
V
mV
1
For propagation delays, t
pdh
refers to the specified signal going high, and t
pdl
refers to the signal going low with transitions measured at 50%.
2
The turn-on of DRVL is initiated after IN goes low by either SW crossing a ~1 V threshold or by expiration of t
SWTO
.
3
Guaranteed by characterization, not production tested.
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