ADR821/ADR827
Rev. 0 | Page 5 of 20
ADR821 ELECTRICAL CHARACTERISTICS—AMPLIFIER (VS = ±15 V)
VCM= 0 V, TA = 25°C, unless otherwise noted.
Table 4.A
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Input Offset Voltage
VOS
40°C < TA < +125°C
100
500
μV
Input Offset Voltage Drift
TCVOS
40°C < TA < +125°C
2
5
μV/oC
Input Bias Current
IB
40°C < TA < +125°C
10
50
nA
Input Offset Bias Current
IOS
40°C < TA < +125°C
5
25
nA
Large Signal Voltage Gain
AVO
VOUT = 14 V to +14 V
RLOAD = 10 kΩ, 40°C < TA < +125°C
109.5
118
dB
RLOAD = 2 kΩ, 40°C < TA < +125°C
100
111
dB
Common-Mode Rejection Ratio
CMRR
VCM = 14 V to +14 V, 40°C < TA < +125°C
75
100
dB
85
dB
OUTPUT CHARACTERISTICS
Output Voltage high
VOH
ILOAD = 1 mA
14.8
14.9
V
ILOAD = 1 mA, 40°C < TA < +125°C
14.75
V
Output Voltage Low
VOL
ILOAD = 1 mA
14.9
14.8
V
ILOAD = 1 mA, 40°C < TA < +125°C
14.75
V
Output Current
ISC
Short-circuit current
±20
mA
POWER SUPPLY
Positive Supply Current
ISY+
No load, 40°C < TA < +125°C
400
μA
Negative Supply Current
ISY
No load, 40°C < TA < +125°C
300
μA
Power Supply Rejection Ratio
PSRR
VS = ±2.8 V to ±15 V
75
100
dB
DYNAMIC PERFORMANCE
Slew Rate
SR
RLOAD = 10 kΩ, CLOAD = 10 pF, AV = +1
0.5
V/μs
Gain Bandwidth Product
GBP
CLOAD = 14 pF
1.0
MHz
Phase Margin
φM
CLOAD = 14 pF
75.4
Degrees
NOISE PERFORMANCE
Voltage Noise
eN p-p
f = 0.1 Hz to 10 Hz
0.2
μV p-p
Voltage Noise Density
eN
f = 1 kHz
16
nV/√Hz