參數(shù)資料
型號： AFM08P2-000
廠商： Alpha Industries, Inc.
英文描述： Ka Band Power GaAs MESFET Chip
中文描述： Ka波段功率GaAs MESFET芯片
文件頁數(shù)： 1/3頁
文件大?。?/td> 19K
代理商： AFM08P2-000
Alpha Industries, Inc.
[781] 935-5150
Fax
[617] 824-4579
Email
sales@alphaind.com
www.alphaind.com
Specifications subject to change without notice. 6/99A
1
Ka Band Power GaAs MESFET Chip
Features
I
24 dBm Output Power @ 18 GHz
I
High Associated Gain, 8.5 dB @ 18 GHz
I
High Power Added Efficiency, 20%
I
Broadband Operation, DC–40 GHz
I
0.25
μ
m Ti/Pd/Au Gates
I
Passivated Surface
I
Through-Substrate Via Hole Grounding
Description
The AFM08P2-000 is a high performance power GaAs
MESFET chip having a gate length of 0.25
μ
m and a total
gate periphery of 800
μ
m.The device has excellent gain
and power performance through 40 GHz, making it
suitable for a wide range of commercial and military
applications in oscillator and amplifier circuits.It employs
Ti/Pd/Au gate metallization and surface passivation to
ensure a rugged, reliable part.Through-substrate via holes
are incorporated into the chip to facilitate low inductance
grounding of the source for improved high frequency and
high gain performance.
AFM08P2-000
Parameter
Test Conditions
Min.
175.0
120.0
1.0
8.0
Typ.
265.0
160.0
3.0
12.0
Max.
360.0
Unit
mA
mS
-V
-V
Saturated Drain Current (I
DSS
)
Transconductance (gm)
Pinch-off Voltage (V
P
)
Gate to Drain
Breakdown Voltage (V
bgd
)
Output Power at 1 dB
Compression (P
1 dB
)
Gain at 1 dB Compression (G
1 dB
)
Power Added Efficiency (
η
add)
Output Power at 1 dB
Compression (P
1 dB
)
Gain at 1 dB Compression (G
1 dB
)
Power Added Efficiency (
η
add)
Thermal Resistance (
Θ
JC
)
V
DS
= 2 V, V
GS
= 0 V
V
DS
= 5 V, I
DS
= 2.0 mA
I
GD
= 800
μ
A
5.0
24.0
dBm
V
DS
= 5 V, I
DS
= 140 mA, F = 18 GHz
8.5
20.0
23.0
dB
%
dBm
V
DS
= 5 V, I
DS
= 140 mA, F = 30 GHz
4.5
10.0
dB
%
°C/W
T
BASE
= 25°C
120.0
Electrical Specifications at 25°C
0
0.327 mm
Drain
Gate
0.655 mm
0.110 mm
0.110 mm
Characteristic
Value
Drain to Source Voltage (V
DS
)
Gate to Source Voltage (V
GS
)
Drain Current (I
DS
)
Gate Current (I
GS
)
Total Power Dissipation (P
T
)
Storage Temperature (T
ST
)
Channel Temperature (T
CH
)
6 V
-4 V
I
DSS
2 mA
1.4 W
-65 to +150°C
175°C
Absolute Maximum Ratings
Chip thickness = 0.1 mm.
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