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參數(shù)資料
| 型號： | AFP02N3-212 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | KU BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 32K |
| 代理商： | AFP02N3-212 |
Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com
1
Specifications subject to change without notice. 6/99A
Low Noise Packaged PHEMT Chips
Features
s Low Noise Figure, 0.75 dB @ 12 GHz
s High Associated Gain, 9.5 dB @ 12 GHz
s High MAG, > 10.0 dB @ 12 GHz
s 0.25
m Ti/Pd/Au gates
s Passivated Surface
s Low Cost Metal Ceramic Package
s Available with Two Lead Lengths
s Available in Tape and Reel Packaging
Description
The AFP02N3-212, 213 are low noise packaged PHEMT
chips. They have excellent gain and noise performance
through Ku band, making them suitable for a wide range
of commercial applications. These devices employ 0.25
m Ti/Pd/Au “mushroom” gates and surface passivation
to ensure a rugged, reliable part. They are available in a
metal ceramic package with a choice of two lead lengths.
The components are also available in tape and reel and
are ready for automatic insertion equipment.
AFP02N3-212, AFP02N3-213
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Saturated Drain Current (IDSS)VDS = 2 V, VGS = 0 V
25.0
55.0
90.0
mA
Transconductance (gm)
VDS = 2 V, IDS = 15 mA
40.0
55.0
mS
Pinch-off Voltage (VP)
VDS = 2 V, IDS = 0.3 mA
-0.2
-1.0
-2.0
V
Gate to Source
IGS = -200 A
-4.0
-6.0
V
Breakdown Voltage (Vbgs)
Noise Figure (NF)
VDS = 2 V, IDS = 15 mA, F = 4 GHz
0.4
0.5
dB
Associated Gain (GA)
15.5
15.0
dB
Noise Figure (NF)
VDS = 2 V, IDS = 15 mA, F = 12 GHz
0.75
0.95
dB
Associated Gain (GA)
8.5
9.5
dB
Electrical Specifications at 25°C
Source
Gate
Source
Drain
Source
Gate
Source
212
213
Characteristic
Value
Drain to Source Voltage (VDS)
4 V
Gate to Source Voltage (VGS)
-2 V
Drain Current (IDS)
IDSS
Gate Current (IGS)
10
A
Total Power Dissipation (PT)
200 mW
Storage Temperature (TST)
-65 to +150°C
Channel Temperature (TCH)
175°C
Absolute Maximum Ratings
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AFP02N3-213 | KU BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| AFP02N8-212 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| AFP02N8-212 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| AFP02N8-213 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| AFP02N8-213 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AFP02N8-000 | 制造商:ALPHA 制造商全稱:ALPHA 功能描述:General Purpose PHEMT Chip |
| AFP02N8-212 | 制造商:ALPHA 制造商全稱:ALPHA 功能描述:General Purpose Packaged PHEMT Chips |
| AFP02N8-213 | 制造商:ALPHA 制造商全稱:ALPHA 功能描述:General Purpose Packaged PHEMT Chips |
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