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參數(shù)資料
| 型號： | AGR09030EU |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁數(shù)： | 6/7頁 |
| 文件大?。?/td> | 310K |
| 代理商： | AGR09030EU |
30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
AGR09030E
Typical Performance Characteristics (continued)
TEST CONDITIONS:
VDD = 28 Vdc, IDQ = 0.33 A, TC = 30 °C, WAVEFORM = CW.
Figure 6. Power Gain vs. Power Out
TEST CONDITIONS:
VDD = 28 Vdc, IDQ = 0.33 A, TC = 30 °C, WAVEFORM = CW.
Figure 7. Power Out and Drain Efficiency vs. Input Power
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POUT (W)X
P
O
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R
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A
IN
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G
)
(dB)
X
865 MHz
880 MHz
895 MHz
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0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7
PIN (W)X
P
O
U
T
(W
)X
30
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POUT
EFFICIENCY
895 MHz
880 MHz
865 MHz
895 MHz
880 MHz
865 MHz
相關(guān)PDF資料 |
PDF描述 |
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| AGR09030EF | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR09045EF | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR09045EU | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19090EU | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19090EF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AGR09045E | 制造商:PEAK 制造商全稱:PEAK electronics GmbH 功能描述:45 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET |
| AGR09045EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR09045EU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:45 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET |
| AGR09045WEF | 功能描述:射頻MOSFET電源晶體管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR09070EF | 功能描述:射頻MOSFET電源晶體管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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