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參數(shù)資料
| 型號： | AGR09070EF |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 345K |
| 代理商： | AGR09070EF |
70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
AGR09070EF
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. dc Characteristics
Table 5. RF Characteristics
1. Across full GSM band, 921 MHz—960 MHz.
2. Measured according to 3GPP GSM 05.05.
Parameter
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-source Breakdown Voltage (VGS = 0, ID = 200 A)
V(BR)DSS
65
—
Vdc
Gate-source Leakage Current (VGS = 5 V, VDS = 0 V)
IGSS
—
2.6
Adc
Zero Gate Voltage Drain Leakage Current (VDS = 26 V, VGS = 0 V)
IDSS
—
8
Adc
On Characteristics
Forward Transconductance (VDS = 10 V, ID = 1.0 A)
GFS
—
6
—
S
Gate Threshold Voltage (VDS = 10 V, ID = 400 A)
VGS(TH)
—
4.8
Vdc
Gate Quiescent Voltage (VDS = 26 V, IDQ = 800 mA)
VGS(Q)
—
3.6
—
Vdc
Drain-source On-voltage (VGS = 10 V, ID = 1.0 A)
VDS(ON)
—
0.12
—
Vdc
Parameter
Symbol
Min
Typ
Max
Unit
Dynamic Characteristics
Reverse Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
CRSS
—
2.3
—
pF
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
COSS
—
48
—
pF
Functional Tests (in Agere Systems Supplied Test Fixture)1
Power Gain
(VDS = 26 V, POUT = 70 W, IDQ = 800 mA)
GL
17
18.25
—
dB
Drain Efficiency
(VDS = 26 V, POUT = P1dB, IDQ = 800 mA)
50
56
—
%
EDGE Linearity Characterization2
(POUT = 21 W, f = 941 MHz, VDS = 26 V, IDQ = 800 mA)
Modulation Spectrum @ ±400 kHz
—
–60
—
dBc
Modulation Spectrum @ ±600 kHz
—
–72
—
dBc
Output Power
(VDS = 26 V, 1 dB gain compression, IDQ = 800 mA)
P1dB
70
85
—
W
Input VSWR
VSWRI
—
1:6
—
Ruggedness
(VDS = 26 V, POUT = 70 W, IDQ = 800 mA, VSWR = 10:1, all angles)
No degradation in output
power.
300
100
(in Supplied Test Fixture)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AGR09085EF | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR09085EU | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR09085EF | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR09085EF | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR09085EU | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AGR09085E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET |
| AGR09085EF | 功能描述:射頻MOSFET電源晶體管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR09085EU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET |
| AGR09090EF | 功能描述:射頻MOSFET電源晶體管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR09130E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:130 W, 921 MHz-960 MHz, N-Channel E-Mode, Lateral MOSFET |
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