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參數(shù)資料
| 型號(hào)： | AGR09085EU |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | SURFACE MOUNT PACKAGE-2 |
| 文件頁(yè)數(shù)： | 8/9頁(yè) |
| 文件大?。?/td> | 215K |
| 代理商： | AGR09085EU |
8
Agere Systems Inc.
85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
May 2004
AGR09085E
Preliminary Data Sheet
Package Dimensions
All dimensions are in inches. Tolerances are ±0.005 in. unless specified.
AGR09085EU
AGR09085EF
Label Notes:
■
M before the part number denotes model program. X before the part number denotes engineering prototype.
■
The last two letters of the part number denote wafer technology and package type.
■
YYWWLL is the date code including place of manufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; T = Thailand).
XXXXX = five-digit wafer lot number.
■
ZZZZZZZ = seven-digit assembly lot number on production parts.
■
ZZZZZZZZZZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes.
PINS:
1. DRAIN
2. GATE
3. SOURCE
PINS:
1. DRAIN
2. GATE
3. SOURCE
2
3
M-AGR21090U
YYWWLL
AGERE
ZZZZZZZ
1
3
1
AGERE
AGR09085XU
YYWWLL XXXXX
ZZZZZZZ
M-AGR21090F
AGERE
2
ZZZZZZZ
YYWWLL
1
3
2
3
1
AGERE
AGR09085XF
YYWWLL XXXXX
ZZZZZZZ
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AGR09085EU | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR09130EF | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR09130EF | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR09130EU | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR09130EU | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AGR09090EF | 功能描述:射頻MOSFET電源晶體管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR09130E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:130 W, 921 MHz-960 MHz, N-Channel E-Mode, Lateral MOSFET |
| AGR09130EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR09130EU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:130 W, 921 MHz-960 MHz, N-Channel E-Mode, Lateral MOSFET |
| AGR09180EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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