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參數(shù)資料
| 型號： | AGR09085EU |
| 廠商： | LSI CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | SURFACE MOUNT PACKAGE-2 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 215K |
| 代理商： | AGR09085EU |
2
Agere Systems Inc.
85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
May 2004
AGR09085E
Preliminary Data Sheet
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. dc Characteristics
Table 5. RF Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-source Breakdown Voltage (VGS =0, ID =200 A)
V(BR)DSS
65
—
Vdc
Gate-source Leakage Current (VGS =5 V, VDS =0V)
IGSS
——
2.6
Adc
Zero Gate Voltage Drain Leakage Current (VDS =28 V, VGS =0V)
IDSS
——
8Adc
On Characteristics
Forward Transconductance (VDS =10 V, ID =1 A)
GFS
—6
—
S
Gate Threshold Voltage (VDS =10V, ID = 400 A)
VGS(TH)
—
4.8
Vdc
Gate Quiescent Voltage (VDS =28 V, IDQ = 800 mA)
VGS(Q)
—3.6
—
Vdc
Drain-source On-voltage (VGS =10V, ID = 1 A)
VDS(ON)
—0.12
—
Vdc
Parameter
Symbol
Min
Typ
Max
Unit
Dynamic Characteristics
Output Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
COSS
—48
—
pF
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
CRSS
—2.3
—
pF
Functional Tests (in Agere Systems Supplied Test Fixture)
(Test frequencies (f) = 865 MHz, 880 MHz, 895 MHz)
Linear Power Gain
(VDS = 28 V, POUT = 8 W, IDQ = 800 mA)
GL
17
18
—
dB
Output Power
(VDS = 28 V, 1 dB compression, IDQ = 800 mA)
P1dB
85
105
—
W
Drain Efficiency
(VDS = 28 V, POUT = P1dB, IDQ = 800 mA)
η
—55
—
%
Third-order Intermodulation Distortion
(100 kHz spacing, VDS = 28 V, POUT = 90 WPEP, IDQ = 800 mA)
IM3
—
30
—
dBc
Input VSWR
VSWRI
—2:1
—
Ruggedness
(VDS = 28 V, POUT = 85 W, IDQ = 800 mA, f = 880 MHz,
VSWR = 10:1, all angles)
—
No degradation in output
power.
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| AGR09130EF | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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