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參數(shù)資料
| 型號(hào)： | AGR09130EU |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | SURFACE MOUNT PACKAGE-3 |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 437K |
| 代理商： | AGR09130EU |
130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
AGR09130E
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. dc Characteristics
Table 5. RF Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-source Breakdown Voltage (VGS = 0, ID = 200 A)
V(BR)DSS
65
—
Vdc
Gate-source Leakage Current (VGS = 5 V, VDS = 0 V)
IGSS
—
4
Adc
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V)
IDSS
—
12
Adc
On Characteristics
Forward Transconductance (VDS = 10 V, ID = 1 A)
GFS
—
9
—
S
Gate Threshold Voltage (VDS = 10 V, ID = 400 A)
VGS(TH)
—
4.8
Vdc
Gate Quiescent Voltage (VDS = 26 V, IDQ = 1000 mA)
VGS(Q)
—
3.8
—
Vdc
Drain-source On-voltage (VGS = 10 V, ID = 1 A)
VDS(ON)
—
0.08
—
Vdc
Parameter
Symbol
Min
Typ
Max
Unit
Dynamic Characteristics
Output Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
COSS
—
72
—
pF
Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
CRSS
—
3.0
—
pF
Functional Tests (in Agere Systems Supplied Test Fixture)
(Test frequencies (f) = 920 MHz, 940 MHz, 960 MHz)
Linear Power Gain
(VDS = 26 V, POUT = 50 W, IDQ = 1000 mA)
GL
16
18
—
dB
Output Power
(VDS = 26 V, 1 dB compression, IDQ = 1000 mA)
P1dB
130
150
—
W
Drain Efficiency
(VDS = 26 V, POUT = P1dB, IDQ = 1000 mA)
—
55
—
%
Third-order Intermodulation Distortion
(100 kHz spacing, VDS = 26 V, POUT = 120 WPEP, IDQ = 1000 mA)
IM3
—
30
—
dBc
Input VSWR
VSWRI
—
2:1
—
Ruggedness
(VDS = 26 V, POUT = 130 W, IDQ = 1000 mA, f = 940 MHz,
VSWR = 5:1, all angles)
—
No degradation in output
power.
D
ra
ft
C
o
p
y
O
n
ly
400
200
(in Supplied Test Fixture)
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