參數(shù)資料
型號: AGR19125EU
元件分類: 功率晶體管
英文描述: L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: SURFACE MOUNT PACKAGE-2
文件頁數(shù): 9/11頁
文件大小: 225K
代理商: AGR19125EU
Agere Systems Inc.
7
Preliminary Data Sheet
AGR19125E
April 2004
125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
TEST CONDITIONS:
VDD = 28 V, F = 1960 MHz, IDQ = 1250 mA, POUT = 125 W (PEP).
Figure 8. Two-Tone Intermodulation Products vs. Tone Spacing
TEST CONDITIONS:
F = 1960 MHz, IDQ = 1250 mA, POUT = 125 W (PEP), 100 kHz TONE SPACING.
Figure 9. Two-Tone Intermodulation Distortion and Efficiency vs. Drain Supply
-55
-45
-35
-25
100
1000
10000
100000
TONE SPACING (kHz)S
IM
D,
I
N
T
E
RM
O
DULA
T
IO
N
DI
S
T
O
R
T
IO
N
(
d
B
c
)S
IMD7
IMD5
IMD3
36
37
38
39
40
41
42
43
44
24
25
26
27
28
29
30
VDD, DRAIN SUPPLY (V)S
DRA
IN
E
F
ICI
E
N
C
Y
(
%
)S
-35
-30
-25
-20
-15
-10
-5
0
5
IM
D3
,I
N
T
E
RM
O
DUL
A
T
IO
N
S
D
IST
O
R
T
IO
N
(d
Bc)
S
EFFICIENCY
IMD3
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