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參數(shù)資料
| 型號： | AGR19180EF |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁數(shù)： | 8/9頁 |
| 文件大?。?/td> | 410K |
| 代理商： | AGR19180EF |
180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
F
E
0
8
1
9
1
R
G
A
Typical Performance Characteristics (continued)
Figure 8. Two-Carrier N-CDMA ACPR, IM3, Power Gain, Drain Efficiency versus Output Power
Figure 9. N-CDMA ACPR, Power Gain, Drain Efficiency versus Output Power
0
5
10
15
20
25
30
35
40
45
50
0
20
40
60
80
100
Pout, OUTPUT POWER (WATTS) Avg.
Gp
s,
PO
W
ER
GA
IN
(d
Bm
),
EF
FI
CI
EN
CY
(%
)
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
IR
L,
RE
TU
RN
LO
SS
(d
B)
,I
M
3(
dB
c),
AC
PR
(d
Bc
)
Gps
ACPR
IM3
IRL
Efficiency
Vdd = 28 Vdc, Idq = 1600 mA
f 1 = 1958.75 MHz, f2 = 1961.25 MHz
2-Carrier N-CDMA
IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier.
9.72 dB Peak/Avg. Ratio @ 0.01% Probability (CCDF)
Channel Spacing (Bandwidth)
ACPR: 885 kHz (30 kHz), IM3: 2.5 MHz (1.2288 MHz)
0
5
10
15
20
25
30
35
40
45
50
0
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60
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100
Pout, OUTPUT POWER (WATTS), AVG.
GP
S,
PO
W
ER
GA
IN
,E
FF
IC
IE
NC
Y
(%
)
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
AD
JA
CE
NT
CH
AN
NE
LP
OW
ER
RA
TI
O
(d
Bc
)
Gps
Vdd = 28 Vdc, Idq = 1600 mA
f = 1990 MHz Bandwidth = 1.2288 MHz
Channel Spacing ( Channel Bandwidth)
885 kHz (30 kHz), 1.25 MHz (12.5 kHz)
2.25 MHz (1MHz)
CDMA 9 Channel Forward
Pilot: 0, Paging: 1, Traffic: 8-13, Sinc: 32
Efficiency
885 kHz (30 kHz)
1.25 MHz (12.5 kHz)
2.25 MHz ( 1MHz)
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| AGR19180EF | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR21030EF | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR21030EU | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR21045EU | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AGR19K180EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR21030EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR21045EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR21060E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:60 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR21060EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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