- 您現在的位置：買賣IC網 > PDF目錄51253 > AGRA10XM UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數資料
| 型號： | AGRA10XM |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | GULL WING PACKAGE-8 |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 326K |
| 代理商： | AGRA10XM |
Preliminary Data Sheet
August 2004
AGRA10XM
10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGRA10 is a broadband general-purpose, high-
voltage, gold-metalized, laterally diffused metal oxide
semiconductor (LDMOS) RF power transistor suit-
able for Nordic Mobile Telephone (NMT) 460 MHz
to 472 MHz, personal cellular band IS-95 865 MHz to
895 MHz, global system for mobile communications/
enhanced data GSM environment (GSM/EDGE)
921 MHz to 960 MHz, and power supply switching
applications from 100 MHz to 1 GHz.
Figure 1. AGRA10 Gull Wing Package
Device Features
■
High-reliability, gold-metalization process.
■
Low hot carrier injection (HCI) induced bias drift
over 20 years.
■
High gain, efficiency, and linearity.
■
Integrated ESD protection.
■
Device can withstand a 10:1 voltage standing wave
ratio (VSWR) with 10 W CW output power.
■
Large signal impedance parameters available.
Performance Features
450 MHz to 500 MHz
■
Continuous wave (CW) performance @ 28 V:
— Output power:
10 W minimum @ P1dB
16 W typical @ P1dB.
— Power gain: 24 dB.
— Efficiency: 64% @ P1dB.
— Return loss: –10 dB.
865 MHz to 895 MHz
■
CW performance @ 28 V:
— Output power:
10 W minimum @ P1dB
11 W typical @ P1dB.
— Power gain: 22 dB.
— Efficiency: 65% @ P1dB.
— Return loss: –10 dB.
921 MHz to 960 MHz
■
CW performance @ 26 V:
— Output power:
10 W minimum @ P1dB
11 W typical @ P1dB.
— Power gain: 21 dB.
— Efficiency: 61% @ P1dB.
— Return loss: –10 dB.
Table 1. ESD Rating*
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
AGRA10
Minimum (V)
Class
HBM
500
1B
MM
50
A
CDM
1500
4
相關PDF資料 |
PDF描述 |
|---|---|
| AGRA10XM | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AH1201DI | DATACOM TRANSFORMER FOR 10/100 BASE-T APPLICATION(S) |
| AH1201DS | DATACOM TRANSFORMER FOR 10/100 BASE-T APPLICATION(S) |
| AH1202DI | DATACOM TRANSFORMER FOR 10/100 BASE-T APPLICATION(S) |
| AH1202DS | DATACOM TRANSFORMER FOR 10/100 BASE-T APPLICATION(S) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AGRF1000 | 功能描述:可復位保險絲 AGRF1000 RoHS:否 制造商:Bourns 電流額定值: 電阻:7.5 Ohms 最大直流電壓: 保持電流:0.1 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 跳閘電流:0.6 A 引線間隔: 系列:MF-PSHT 工作溫度范圍:- 40 C to + 125 C |
| AGRF1000-2 | 功能描述:可復位保險絲 AGRF1000-2 RoHS:否 制造商:Bourns 電流額定值: 電阻:7.5 Ohms 最大直流電壓: 保持電流:0.1 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 跳閘電流:0.6 A 引線間隔: 系列:MF-PSHT 工作溫度范圍:- 40 C to + 125 C |
| AGRF1000-AP | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:PolySwitch Resettable Devices Automotive Devices |
| AGRF1100 | 功能描述:可復位保險絲 AGRF1100 RoHS:否 制造商:Bourns 電流額定值: 電阻:7.5 Ohms 最大直流電壓: 保持電流:0.1 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 跳閘電流:0.6 A 引線間隔: 系列:MF-PSHT 工作溫度范圍:- 40 C to + 125 C |
| AGRF1100-2 | 功能描述:可復位保險絲 AGRF1100-2 RoHS:否 制造商:Bourns 電流額定值: 電阻:7.5 Ohms 最大直流電壓: 保持電流:0.1 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 跳閘電流:0.6 A 引線間隔: 系列:MF-PSHT 工作溫度范圍:- 40 C to + 125 C |
發(fā)布緊急采購，3分鐘左右您將得到回復。