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參數(shù)資料
| 型號： | AK64256S |
| 廠商： | Accutek Microcircuit Corporation |
| 英文描述： | 262,144 X 8 Bit MOS Dynamic Random Access Memory |
| 中文描述： | 262,144 × 8位馬鞍山動態(tài)隨機(jī)存取存儲器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 111K |
| 代理商： | AK64256S |
DESCRIPTION
The Accutek AK48256 high density memory modules is a random
access memory organized in 256K x 8 bit words. The assembly
consists of eight standard 256K x 1 DRAMs in plastic leaded chip
carriers (PLCC) mounted on the front side of a printed circuit board.
Themodulecanbeconfiguredasaleadless30padSIMoraleaded
30 pin SIP. This packaging approach provides a 6 to 1 density in-
crease over standard DIP packaging.
TheoperationoftheAK48256isidenticaltoeight256Kx1DRAMs.
The data input is tied to the data output and brought out separately
for each device, with common RAS, CAS and WE control. This
commonI/Ofeaturedictatestheuseofearly-writecyclestoprevent
contentionofDandQ. SincetheWrite-Enable(WE)signalmustal-
ways go low before CAS in a write cycle, Read-Write and
Read-Modify-Write operation is not possible.
FEATURES
262,144 by 8 bit organization
Optional 30 Pad leadless SIM (Single In-Line Module) or 30
Pin leaded SIP (Single In-Line Package)
JEDEC standard pinout
Each device has common D and Q lines with common RAS,
CAS and WE control
2.8 Watt active and 180 mW standby (max)
Operating free air temperature 0
0
C to 70
0
C
Upward compatible with AK481024, AK581024, AK584096 and
AK5816384
Functionally and Pin compatible with AK58256A
Accutek
Microcircuit
Corporation
AK48256S / AK48256G
262,144 X 8 Bit MOS
Dynamic Random Access Memory
1
30
1
Front View
30-Pin SIM
30-Pin SIP
PIN NOMENCLATURE
A
0
- A
8
Address Inputs
DQ
1
- DQ
8
Data In / Data Out
CAS
Column Address Strobe
RAS
Row Address Strobe
WE
Write Enable
Vcc
5v Supply
Vss
Ground
NC
No Connect
MODULE OPTIONS
Leadless SIM: AK48256S
Leaded SIP: AK48256G
PIN ASSIGNMENT
PIN #
SYMBOL
PIN #
SYMBOL
1
Vcc
16
DQ5
2
CAS
17
A8
3
DQ!
18
NC
4
A0
19
NC
5
A1
20
DQ6
6
DQ2
21
WE
7
A2
22
Vss
8
A3
23
DQ7
9
Vss
24
NC
10
DQ3
25
DQ8
11
A4
26
NC
12
A5
27
RAS
13
DQ4
28
NC
14
A6
29
NC
15
A7
30
Vcc
FUNCTIONAL DIAGRAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AK64256W | 262,144 X 8 Bit MOS Dynamic Random Access Memory |
| AK64256Z | 262,144 X 8 Bit MOS Dynamic Random Access Memory |
| AK644096D | 262,144 X 8 Bit MOS Dynamic Random Access Memory |
| AK644096G | 262,144 X 8 Bit MOS Dynamic Random Access Memory |
| AK644096S | 262,144 X 8 Bit MOS Dynamic Random Access Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AK64256W | 制造商:ACCUTEK 制造商全稱:ACCUTEK MICROCIRCUIT CORPORATION 功能描述:65,536 x 32 Bit CMOS/BiCMOS Static Random Access Memory |
| AK64256Z | 制造商:ACCUTEK 制造商全稱:ACCUTEK MICROCIRCUIT CORPORATION 功能描述:65,536 x 32 Bit CMOS/BiCMOS Static Random Access Memory |
| AK6-430C | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 TVS 6KA RATED 430V BI AXIAL RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| AK6-430C-12 | 功能描述:TVS DIODE 430VWM 625VC AXIAL 制造商:littelfuse inc. 系列:AK6 包裝:散裝 零件狀態(tài):有效 類型:齊納 單向通道:- 雙向通道:1 電壓 - 反向關(guān)態(tài)（典型值）:430V 電壓 - 擊穿（最小值）:440V 電壓 - 箝位（最大值）@ Ipp:625V 電流 - 峰值脈沖（10/1000μs）:6000A（6kA）（8/20μs） 功率 - 峰值脈沖:- 電源線路保護(hù):無 應(yīng)用:通用 不同頻率時(shí)的電容:1nF @ 10kHz 工作溫度:-55°C ~ 125°C（TJ） 安裝類型:通孔 封裝/外殼:軸向，直角彎曲（24.15mm 中心） 供應(yīng)商器件封裝:軸向 標(biāo)準(zhǔn)包裝:12 |
| AK6-430C-BP | 制造商:Micro Commercial Components (MCC) 功能描述:TVS DIODE 430VWM 625VC AXIAL |
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