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參數(shù)資料
| 型號(hào)： | ALD1117PA |
| 廠商： | Advanced Linear Devices, Inc. |
| 英文描述： | QUAD/DUAL P-CHANNEL MATCHED MOSFET ARRAY |
| 中文描述： | 四/雙P溝道MOSFET的陣列匹配 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 61K |
| 代理商： | ALD1117PA |
ALD1107/ALD1117
Advanced Linear Devices
3
TYPICAL PERFORMANCE CHARACTERISITCS
OUTPUT CHARACTERISTICS
DRAIN SOURCE VOLTAGE (V)
D
(
-10
-7.5
-5.0
-2.5
0
V
BS
= 0V
T
A
= 25
°
C
-10V
-8V
-6V
-4V
-2V
0
-8
-2
-6
-4
-10
-12
V
GS
= -12V
LOW VOLTAGE OUTPUT
CHARACTERISTICS
DRAIN SOURCE VOLTAGE (mV)
D
(
μ
A
-320
-160
0
160
320
-500
500
250
0
-250
-4V
-2V
V
GS
= -12V
-6V
V
BS
= 0V
T
A
= 25
°
C
TRANSFER CHARACTERISTIC
WITH SUBSTRATE BIAS
GATE SOURCE VOLTAGE (V)
0
-0.8
-1.6
-2.4
-3.2
-4.0
-20
-15
-10
-5
0
D
(
μ
A
V
BS
= 0V
4V
6V
8V
10V
12V
V
GS
= V
DS
T
A
= 25
°
C
2V
-12
FORWARD TRANSCONDUCTANCE
vs. DRAIN SOURCE VOLTAGE
DRAIN SOURCE VOLTAGE (V)
0
-8
-2
-6
-4
-10
F
(
1.0
0.5
0.2
0.1
0.05
0.02
0.01
V
BS
= 0V
f = 1KHz
I
DS
= -5mA
T
A
= +125
°
C
T
A
= +25
°
C
I
DS
= -1mA
GATE SOURCE VOLTAGE (V)
DRAIN SOURCE ON RESISTANCE
R
DS (ON)
vs. GATE SOURCE VOLTAGE
D
(
)
100
10
1
0.1
-2
0
-4
-6
-8
-10
-12
V
DS
= 0.4V
V
BS
= 0V
T
A
= +125
°
C
T
A
= +25
°
C
OFF DRAIN CURRENT vs.
AMBIENT TEMPERATURE
AMBIENT TEMPERATURE (
°
C)
O
(
-50
-25
+25
+50
+75
+125
+100
0
V
DS
= -12V
V
GS
= V
BS
= 0V
1
10
100
1000
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ALD1117PAL | 功能描述:MOSFET Dual P-Channel Array RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ALD1117SA | 功能描述:MOSFET Dual P-Channel Array RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ALD1117SAL | 功能描述:MOSFET Dual P-Channel Array RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ALD111910MAL | 功能描述:MOSFET Dual N-Ch FET EPAD Matched Pair Array RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ALD111910PAL | 功能描述:MOSFET Dual N-Ch FET EPAD Matched Pair Array RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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