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參數(shù)資料
| 型號(hào)： | ALD1123EDC |
| 廠(chǎng)商： | Advanced Linear Devices, Inc. |
| 英文描述： | QUAD/DUAL EPAD PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY |
| 中文描述： | 四/雙EPAD精密配對(duì)N溝道MOSFET陣列 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 55K |
| 代理商： | ALD1123EDC |
ALD1123E/ALD1121E
Advanced Linear Devices
4
E-TRIM CHARACTERISTICS
TA = 25°C V+ = +5.0V unless otherwise specified
ALD1123E
ALD1121E
Test
Parameter
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Conditions
E-trim Vt Range
4
Vt
1.000
3.000
1.000
3.000
V
Resolution of V t
E-trim Pulse Step
4
RV t
0.1
1
0.1
1
mV
Change in Vt Per
Vt / N
0.5
mV/ pulse
Vt = 1.0V
E-trim Pulse 4
0.05
Vt = 2.5V
E-trim Pulse Voltage 4
Vp
11.75
12.00
12.25
11.75
12.00
12.25
V
E-trim Pulse Current 4
Ip
2
mA
Pulse Frequency
4
pulse
50
KHZ
Transconductance
gm
1.4
mA/V
VD = 10V,VG =Vt + 4.0
Transconductance Match
gm
25
A/V
VD = 10V,VG =Vt + 4.0
Low Level Output
Conductance
gOL
66
A/V
VG = Vt +0.5V
High Level Output
Conductance
gOH
68
A/V
VG = Vt +4.0V
Drain Off Leakage Current
ID(OFF)
5
400
5
400
pA
44
nA
TA = 125°C
Gate Leakage Current
IGSS
10
100
10
100
pA
11
nA
TA = 125°C
Input Capacitance
CISS
25
pF
Cross Talk
60
dB
f = 100KHz
Relaxation Time Constant
4
tRLX
2
Hours
Relaxation Voltage 4
VRLX
-0.3
%
1.0V
≤ Vt ≤ 3.0V
OPERATING ELECTRICAL CHARACTERISTICS (cont'd)
TA = 25°C V+ = +5.0V unless otherwise specified
ALD1123E
ALD1121E
Test
Parameter
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Conditions
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ALD1123EPC | 功能描述:MOSFET Quad EPAD(R) N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ALD1123EPCL | 功能描述:MOSFET Quad EPAD(R) N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ALD1123ESC | 功能描述:MOSFET Quad EPAD(R) N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ALD1123ESCL | 功能描述:MOSFET Quad EPAD(R) N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ALD112T | 制造商:Panasonic Electric Works 功能描述: |
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