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參數(shù)資料
| 型號： | ALT6720RM45Q7 |
| 廠商： | ANADIGICS INC |
| 元件分類： | 放大器 |
| 英文描述： | 832 MHz - 862 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 3 X 3 MM, 1 MM HEIGHT, ROHS COMPLIANT, M45, 10 PIN |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 457K |
| 代理商： | ALT6720RM45Q7 |
Data Sheet- Rev 2.0
06/2011
ALT6720
3
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
Stresses in excess of the absolute ratings may cause permanent damage.
Functional operation is not implied under these conditions. Exposure
to absolute ratings for extended periods of time may adversely affect
reliability.
Table 3: Operating Ranges
The device may be operated safely over these conditions; however, parametric performance is guaranteed only over
theconditionsdefinedintheelectricalspecifications.
Notes:
(1) LTE waveform characteristics: 20 MHz QPSK, 18 RB.
(2) POUT derated 0.5 dB for 3.2 V operation.
PARAMETER
MIN
MAX
UNIT
SupplyVoltage(VCC)
0
+5.0
V
BatteryVoltage(VBATT)
0
+6
V
ControlVoltages(VMODE1,VMODE2,VEN)
0
+3.5
V
RFInputPower(PIN)
-
+10
dBm
StorageTemperature(TSTG)
-40
+150
°C
PARAMETER
MIN
TYP
MAX
UNIT
COMMENTS
OperatingFrequency(f)
832
-
862
MHz
SupplyVoltage(VCC)
+3.2
+3.4
+4.35
V
POUT <+27.6dBm
EnableVoltage(VEN)
+1.35
0
+1.8
-
+3.1
+0.5
V
PA"on"
PA"shutdown"
ModeControlVoltage(VMODE1,VMODE2)
+1.35
0
+1.8
-
+3.1
+0.5
V
LowBiasMode
HighBiasMode
OutputPower(UMTS)
LTE(1)(MPR=0),HPM
LTE(1)(MPR=0),MPM
LTE(1)(MPR=0),LPM
27.1(2)
-
27.6
16.0
7.0
-
dBm
TS36.101Rel8
CaseTemperature(TC)
-30
-
+90
°C
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