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參數資料
| 型號： | AM27X64-200PC |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 64 Kilobit (8 K x 8-Bit) CMOS ExpressROM Device |
| 中文描述： | 8K X 8 OTPROM, 200 ns, PDIP28 |
| 封裝： | PLASTIC, DIP-28 |
| 文件頁數： | 4/10頁 |
| 文件大小： | 139K |
| 代理商： | AM27X64-200PC |
4
Am27X64
FUNCTIONAL DESCRIPTION
Read Mode
To obtain data at the device outputs, Chip Enable (CE#)
and Output Enable (OE#) must be driven low. CE# con-
trols the power to the device and is typically used to se-
lect the device. OE# enables the device to output data,
independent of device selection. Addresses must be
stable for at least t
ACC
–t
OE
.
Refer to the Switching
Waveforms section for the timing diagram.
Standby Mode
The device enters the CMOS standby mode when CE#
is at V
CC
±
0.3 V. Maximum V
CC
current is reduced to
100 μA. The device enters the TTL-standby mode
when CE# is at V
IH
. Maximum V
CC
current is reduced
to 1.0 mA. When in either standby mode, the device
places its outputs in a high-impedance state, indepen-
dent of the OE# input.
Output OR-Tieing
To accommodate multiple memory connections, a
two-line control function provides:
I
Low memory power dissipation, and
I
Assurance that output bus contention will not occur.
CE# should be decoded and used as the primary de-
vice-selecting function, while OE# be made a common
connection to all devices in the array and connected to
the READ line from the system control bus. This as-
sures that all deselected memory devices are in their
low-power standby mode and that the output pins are
only active when data is desired from a particular mem-
ory device.
System Applications
During the switch between active and standby condi-
tions, transient current peaks are produced on the ris-
ing and falling edges of Chip Enable. The magnitude of
these transient current peaks is dependent on the out-
put capacitance loading of the device. At a minimum, a
0.1 μF ceramic capacitor (high frequency, low inherent
inductance) should be used on each device between
V
CC
and V
SS
to minimize transient effects. In addition,
to overcome the voltage drop caused by the inductive
effects of the printed circuit board traces on Express-
ROM device arrays, a 4.7 μF bulk electrolytic capacitor
should be used between V
CC
and V
SS
for each eight
devices. The location of the capacitor should be close
to where the power supply is connected to the array.
MODE SELECT TABLE
Note:
X = Either V
IH
or V
IL
.
Mode
CE#
OE#
PGM#
V
PP
Outputs
Read
V
IL
V
IL
X
X
D
OUT
Output Disable
X
V
IH
X
X
High Z
Standby (TTL)
V
IH
X
X
X
High Z
Standby (CMOS)
V
CC
±
0.3 V
X
X
X
High Z
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