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參數(shù)資料
| 型號(hào)： | AM28F010-120ECB |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類(lèi)： | PROM |
| 英文描述： | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| 中文描述： | 128K X 8 FLASH 12V PROM, 120 ns, PDSO32 |
| 封裝： | TSOP-32 |
| 文件頁(yè)數(shù)： | 23/35頁(yè) |
| 文件大小： | 492K |
| 代理商： | AM28F010-120ECB |
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Am28F010
23
DC CHARACTERISTICS over operating range unless otherwise specified
TTL/NMOS Compatible
Notes:
1.
Caution:
The Am28F010 must not be removed from (or inserted into) a socket when V
CC
or V
PP
is applied. If V
CC
≤
1.0 Volt,
the voltage difference between V
PP
and V
CC
should not exceed 10.0 Volts. Also, the Am28F010 has a V
PP
rise time and fall
time specification of 500 ns minimum.
2. I
CC1
is tested with OE
#
= V
IH
to simulate open outputs.
3. Maximum active power usage is the sum of I
CC
and I
PP
.
4. Not 100% tested.
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Leakage Current
V
CC
= V
CC
Max, V
IN
= V
CC
or V
SS
±
1.0
μA
I
LO
Output Leakage Current
V
CC
= V
CC
Max, V
OUT
= V
CC
or V
SS
±
1.0
μA
I
CCS
V
CC
Standby Current
V
CC
= V
CC
Max, CE
#
= V
IH
0.2
1.0
mA
I
CC1
V
CC
Active Read Current
V
CC =
V
CC
Max, CE
#
= V
IL,
OE
#
= V
IH
I
OUT
= 0 mA, at 6 MHz
20
30
mA
I
CC2
V
CC
Programming Current
CE
=
V
IL
Programming in Progress
(Note 4)
20
30
mA
I
CC3
V
CC
Erase Current
CE
#
=
V
IL
Erasure in Progress (Note 4)
20
30
mA
I
PPS
V
PP
Standby Current
V
PP
= V
PPL
±
1.0
μA
I
PP1
V
PP
Read Current
V
PP
= V
PPH
70
200
μA
V
PP
= V
PPL
±
1.0
I
PP2
V
PP
Programming Current
V
PP
= V
PPH
Programming in Progress (Note 4)
10
30
mA
I
PP3
V
PP
Erase Current
V
PP
= V
PPH
Erasure in Progress (Note 4)
10
30
mA
V
IL
Input Low Voltage
–0.5
0.8
V
V
IH
Input High Voltage
2.0
V
CC
+ 0.5
V
V
OL
Output Low Voltage
I
OL
= 5.8 mA, V
CC
= V
CC
Min
0.45
V
V
OH1
Output High Voltage
I
OH
= –2.5 mA, V
CC
= V
CC
Min
2.4
V
V
ID
A9 Auto Select Voltage
A9 = V
ID
11.5
13.0
V
I
ID
A9 Auto Select Current
A9 = V
ID
Max, V
CC
= V
CC
Max
5
50
μA
V
PPL
V
PP
during Read-Only
Operations
Note:
Erase/Program are inhibited
when V
PP
= V
PPL
0.0
V
CC
+2.0
V
V
PPH
V
PP
during Read/Write
Operations
11.4
12.6
V
V
LKO
Low V
CC
Lock-out Voltage
3.2
3.7
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM28F010-120EE | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-120EEB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-120EI | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-120EIB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-120FC | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM28F010-120EE | 制造商: 功能描述: 制造商:Advanced Micro Devices 功能描述: 制造商:undefined 功能描述: |
| AM28F010-120EEB | 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-120EI | 制造商:Advanced Micro Devices 功能描述: |
| AM28F010-120EIB | 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-120FC | 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
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