- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366379 > AM28F010-120JEB (ADVANCED MICRO DEVICES INC) 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory PDF資料下載
參數(shù)資料
| 型號： | AM28F010-120JEB |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| 中文描述： | 128K X 8 FLASH 12V PROM, 120 ns, PQCC32 |
| 封裝： | PLASTIC, LCC-32 |
| 文件頁數(shù)： | 17/35頁 |
| 文件大?。?/td> | 492K |
| 代理商： | AM28F010-120JEB |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁當(dāng)前第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁
Am28F010
17
Table 5.
Flashrite Programming Algorithm
Notes:
1. See AC and DC Characteristics for values of V
PP
parameters. The V
PP
power supply can be hard-wired to the device or
switchable. When V
PP
is switched, V
PPL
may be ground, no connect with a resistor tied to ground, or less than V
CC
+ 2.0 V
2. Program Verify is performed only after byte programming. A final read/compare may be performed (optional) after the register
is written with the read command.
Bus Operations
Command
Comments
Standby
Wait for V
PP
Ramp to V
PPH
(Note 1)
Initialize Pulse counter
Write
Program Setup
Data = 40h
Program
Valid Address/Data
Standby
Duration of Programming Operation (t
WHWH1
)
Write
Program-Verify (Note 2)
Data = C0h Stops Program Operation
Standby
Write Recovery Time before Read = 6 μs
Read
Read Byte to Verify Programming
Standby
Compare Data Output to Data Expected
Write
Reset
Data = FFh, resets the register for read operations.
Standby
Wait for V
PP
Ramp to V
PPL
(Note 1)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM28F010-120JI | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-120JIB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-120PC | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-120PCB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-120PEB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM28F010-120JI | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-120JIB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-120LC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| AM28F010-120LE | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| AM28F010-120LEB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。