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參數資料
| 型號： | AM28F010-150EI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| 中文描述： | 128K X 8 FLASH 12V PROM, 150 ns, PDSO32 |
| 封裝： | TSOP-32 |
| 文件頁數： | 17/35頁 |
| 文件大?。?/td> | 492K |
| 代理商： | AM28F010-150EI |
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Am28F010
17
Table 5.
Flashrite Programming Algorithm
Notes:
1. See AC and DC Characteristics for values of V
PP
parameters. The V
PP
power supply can be hard-wired to the device or
switchable. When V
PP
is switched, V
PPL
may be ground, no connect with a resistor tied to ground, or less than V
CC
+ 2.0 V
2. Program Verify is performed only after byte programming. A final read/compare may be performed (optional) after the register
is written with the read command.
Bus Operations
Command
Comments
Standby
Wait for V
PP
Ramp to V
PPH
(Note 1)
Initialize Pulse counter
Write
Program Setup
Data = 40h
Program
Valid Address/Data
Standby
Duration of Programming Operation (t
WHWH1
)
Write
Program-Verify (Note 2)
Data = C0h Stops Program Operation
Standby
Write Recovery Time before Read = 6 μs
Read
Read Byte to Verify Programming
Standby
Compare Data Output to Data Expected
Write
Reset
Data = FFh, resets the register for read operations.
Standby
Wait for V
PP
Ramp to V
PPL
(Note 1)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| AM28F010-150EIB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-150FC | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-150FCB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-150FE | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-150FEB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
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