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參數(shù)資料
| 型號(hào)： | AM28F010-150PC |
| 廠(chǎng)商： | ADVANCED MICRO DEVICES INC |
| 元件分類(lèi)： | PROM |
| 英文描述： | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| 中文描述： | 128K X 8 FLASH 12V PROM, 150 ns, PDIP32 |
| 封裝： | PLASTIC, DIP-32 |
| 文件頁(yè)數(shù)： | 26/35頁(yè) |
| 文件大小： | 492K |
| 代理商： | AM28F010-150PC |
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26
Am28F010
SWITCHING TEST WAVEFORMS
SWITCHING CHARACTERISTICS over operating range unless otherwise specified
AC Characteristics—Read Only Operation
Notes:
1. Guaranteed by design; not tested.
2. Not 100% tested.
Parameter
Symbols
Am28F010 Speed Options
JEDEC
Standard Parameter Description
-70
-90
-120
-150
-200
Unit
t
AVAV
t
RC
Read Cycle Time (Note 2)
Min
70
90
120
150
200
ns
t
ELQV
t
CE
Chip Enable AccessTime
Max
70
90
120
150
200
ns
t
AVQV
t
ACC
Address Access Time
Max
70
90
120
150
200
ns
t
GLQV
t
OE
Output Enable Access Time
Max
35
35
50
55
55
ns
t
ELQX
t
LZ
Chip Enable to Output in Low Z (Note 2)
Min
0
0
0
0
0
ns
t
EHQZ
t
DF
Chip Disable to Output in High Z (Note 1)
Max
20
20
30
35
35
ns
t
GLQX
t
OLZ
Output Enable to Output in Low Z (Note 2)
Min
0
0
0
0
0
ns
t
GHQZ
t
DF
Output Disable to Output in High Z (Note 2)
Max
20
20
30
35
35
ns
t
AXQX
t
OH
Output Hold from first of Address, CE#, or
OE# Change (Note 2)
Min
0
0
0
0
0
ns
t
WHGL
Write Recovery Time before Read
Min
6
6
6
6
6
μs
t
VCS
V
CC
Setup Time to Valid Read (Note 2)
Min
50
50
50
50
50
μs
11559H-15
3 V
0 V
Input
Output
1.5 V
1.5 V
Test Points
AC Testing for -70 devices: Inputs are driven at 3.0 V for a
logic “1” and 0 V for a logic “0”. Input pulse rise and fall times
are
≤
10 ns.
2.4 V
0.45 V
Input
Output
Test Points
2.0 V
2.0 V
0.8 V
0.8 V
AC Testing (all speed options except -70): Inputs are driven at
2.4 V for a logic “1” and 0.45 V for a logic “0”. Input pulse rise
and fall times are
≤
10 ns.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM28F010-150PCB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-150PE | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-150PEB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-150PI | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-150PIB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM28F010-150PCB | 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-150PE | 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-150PEB | 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-150PI | 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-150PIB | 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
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